Comment on 'Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements'.

Nanotechnology

Institute of Physics, National Chiao Tung University, Hsinchu 30010, Taiwan. Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan.

Published: November 2009

We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.

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http://dx.doi.org/10.1088/0957-4484/20/46/468001DOI Listing

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View Article and Find Full Text PDF

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