Thin-film ferroelectric capacitance can be obtained by 2 different methods. Capacitance obtained using the derivative of its hysteresis loop is related to large applied signals and can be called the large-signal capacitance. Capacitance measured directly with a small, applied ac signal together with a slow changing dc bias is called the small-signal capacitance. This paper investigated the voltage dependence of the large- and small-signal capacitances. Measurements show that the large-signal C-V curve of thin-film ferroelectrics has much sharper peaks and higher peak values than the small-signal C-V curve. Analyses based on the Landau-Khalatnikov model shows that practical small-signal capacitance is closer to the ideal capacitance. However, its C-V curve has clearance areas around the coercive voltage, and the polarization switching is not reflected in the small-signal capacitance. This causes the peaks of small-signal C-V curves to be lower than that of large-signal C-V curves.
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http://dx.doi.org/10.1109/TUFFC.2009.1262 | DOI Listing |
J Elect Propuls
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School of Aerospace Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA.
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Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China.
In this paper, the degradation mechanism of the RF performance of 22 nm fully depleted (FD) silicon-on-insulator nMOSFETs at different total ionizing dose levels has been investigated. The RF figures of merit (the cut-off frequency , maximum oscillation frequency ) show significant degradation of approximately 14.1% and 6.
View Article and Find Full Text PDFNanoscale
October 2024
Department of Electrical Engineering, Chang Gung University, Taoyuan, 33302, Taiwan.
Micromachines (Basel)
August 2024
School of Microelectronics, Northwestern Polytechnical University, 1 Dongxiang Road, Chang'an District, Xi'an 710129, China.
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View Article and Find Full Text PDFNat Commun
September 2024
Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg, Sweden.
A method for the characterization of organic electrochemical transistors (OECTs) based on small signal analysis is presented that allows to determine the electronic mobility as a function of continuous gate potential using a standard two-channel AC potentiostat. Vector analysis in the frequency domain allows to exclude parasitic components in both ionic and electronic conduction regardless of film thickness, thus resulting in a standard deviation as low as 4%. Besides the electronic mobility, small signal analysis of OECTs also provides information about a wide range of other parameters including the conductance, transconductance, conductivity and volumetric capacitance through a single measurement.
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