By restricting the motion of a high-mobility 2D electron gas to a network of channels with smooth confinement, we were able to trace, both classically and quantum mechanically, the interplay of backscattering, and of the bending action of a weak magnetic field. Backscattering limits the mobility, while bending initiates quantization of the Hall conductivity. We demonstrate that, in restricted geometry, electron motion reduces to two Chalker-Coddington networks, with opposite directions of propagation along the links, which are weakly coupled by disorder. The interplay of backscattering and bending results in the quantum Hall transition in a nonquantizing magnetic field, which decreases with increasing mobility. This is in accord with the scenario of floating up delocalized states.
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http://dx.doi.org/10.1103/PhysRevLett.103.066801 | DOI Listing |
Nature
January 2025
Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea.
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Systems Engineering, College of Engineering, Cornell University, Ithaca, NY 14853, USA.
Methods are needed to mitigate microplastic (MP) pollution to minimize their harm to the environment and human health. Given the ability of polypeptides to adsorb strongly to materials of micro- or nanometer size, plastic-binding peptides (PBPs) could help create bio-based tools for detecting, filtering, or degrading MNP pollution. However, the development of such tools is prevented by the lack of PBPs.
View Article and Find Full Text PDFNat Mater
January 2025
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China.
Machine learning algorithms have proven to be effective for essential quantum computation tasks such as quantum error correction and quantum control. Efficient hardware implementation of these algorithms at cryogenic temperatures is essential. Here we utilize magnetic topological insulators as memristors (termed magnetic topological memristors) and introduce a cryogenic in-memory computing scheme based on the coexistence of a chiral edge state and a topological surface state.
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CNR-IOM-Istituto Officina dei Materiali, Consiglio Nazionale delle Ricerche, 34149 Trieste, Italy.
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