AI Article Synopsis
- There is a strong connection between how mobile carriers are in epitaxial graphene and its Raman topography when grown on silicon carbide.
- The Hall mobility varies significantly based on the thickness of the graphene and the uniformity of strain in the monolayer.
- High mobility of 18,100 cm²/(V s) at room temperature is achieved, and this mobility is greatly affected by the stacking arrangement of the graphene layers.
Article Abstract
We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on SiC(0001) is highly dependent on thickness and monolayer strain uniformity. Additionally, we achieve high mobility epitaxial graphene (18100 cm(2)/(V s) at room temperature) on SiC(0001) and show that carrier mobility depends strongly on the graphene layer stacking.
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| http://dx.doi.org/10.1021/nl901073g | DOI Listing |
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