We report a 100000-fold increase in the conductance of individual CdSe nanorods when they are electrically contacted via direct solution phase growth of Au tips on the nanorod ends. Ensemble UV-vis and X-ray photoelectron spectroscopies indicate this enhancement does not result from alloying of the nanorod. Rather, low temperature tunneling and high temperature (250-400 K) thermionic emission across the junction at the Au contact reveal a 75% lower interface barrier to conduction compared to a control sample. We correlate this barrier lowering with the electronic structure at the Au-CdSe interface. Our results emphasize the importance of a nanocrystal surface structure for robust device performance and the advantage of this contact method.

Download full-text PDF

Source
http://dx.doi.org/10.1021/nl902186vDOI Listing

Publication Analysis

Top Keywords

enhanced semiconductor
4
semiconductor nanocrystal
4
nanocrystal conductance
4
conductance solution
4
solution grown
4
grown contacts
4
contacts report
4
report 100000-fold
4
100000-fold increase
4
increase conductance
4

Similar Publications

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!