Narrowing SWNT diameter distribution using size-separated ferritin-based Fe catalysts.

Nanotechnology

Micro and Nanosystems, Department of Mechanical and Process Engineering, ETH Zürich, Zurich, Switzerland.

Published: September 2009

AI Article Synopsis

  • Sensors and devices made from single-walled carbon nanotubes (SWNTs) face challenges due to Schottky barriers at metal-semiconductor interfaces, which affect their electrical performance.
  • The height of these barriers can be adjusted by choosing appropriate contact metals and controlling the SWNT diameter, with optimal conditions achieved using Pd contacts for SWNTs larger than 2 nm.
  • A new fabrication method has been developed that creates SWNTs with a mean diameter of 1.9-2.4 nm and a very narrow distribution, improving device reproducibility by carefully separating ferritin catalyst particles before chemical vapor deposition.

Article Abstract

Sensors and devices made from single-walled carbon nanotubes (SWNTs) are most often electrically probed through metal leads contacting the semiconducting SWNTs (s-SWNTs). Contact barriers in general and Schottky barriers (SBs) in particular are usually obtained at a metal-semiconductor interface. The unique one-dimensional structure (1D) of SWNTs allows tailoring of the SB heights through the contact metal type and the size of the s-SWNT bandgap. A large workfunction reduces the SB height (e.g. using Pd as the metal contact material). The bandgap of an SWNT is inversely proportional to its diameter. Ohmic contacts--the preferable choice--are achieved for s-SWNTs with diameters greater than 2 nm on Pd metal leads. SWNT device reproducibility, on the other hand, requires a narrow distribution of the SWNT diameters. Here, we present a method to fabricate SWNTs with a large and adjustable mean diameter (1.9-2.4 nm) and very narrow diameter distribution (+/- 0.27 nm at mean diameter 1.9 nm). The results are achieved through a size separation of the ferritin catalyst particles by sedimentation velocity centrifugation prior to their use in the chemical vapor deposition (CVD) formation of SWNTs.

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Source
http://dx.doi.org/10.1088/0957-4484/20/35/355601DOI Listing

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