Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O.

Appl Phys Lett

Department of Physics, University of California, Berkeley, Berkeley, California 92093, USA.

Published: May 2009

Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65x10(20) cm(-3) as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. The ability to reversibly induceeliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC2719463PMC
http://dx.doi.org/10.1063/1.3147856DOI Listing

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