[Emission spectrum analysis of laser ablation on the silicon surface].

Guang Pu Xue Yu Guang Pu Fen Xi

College of Electronics & Information Engineering, Sichuan University, Chengdu 610064, China.

Published: April 2009

AI Article Synopsis

  • The study examined the relationship between free electron density, temperature of laser-induced plasma, and damage to silicon surfaces.
  • As the energy of the laser pulse increased, the volume of the plasma grew consistently, and its temperature rose slightly, while the free electron density remained constant.
  • Damage characteristics included a well-melted interior with periodic stripes and irregular patterns at the edges, along with noticeable boundaries and color changes due to plasma spattering.

Article Abstract

The free electron density and temperature of laser-induced plasma and the damage on the silicon surface were investigated. The results show that the volume and the free electron density of laser induced plasma, as well as the plasma temperature will determine the profile and the size of silicon superficial damage. It was also found that the volume of laser plasma will increase continuously and the temperature will increase slightly with the increase in the energy of laser pulse, while the density of free electrons will remain invariable. The free electron density and the temperature reduce gradually from centre to edge, so the damage appearance has the following features: The interior area of damage was melted so well that the periodic stripes were formed. The periodic stripes were quite irregular for the area not melted very well. The boundary of damage is apparent and sometimes color changes induced by plasma spattering were observed.

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