Coherent light-matter interactions of direct-gap semiconductor nanostructures provide a great test system for fundamental research into quantum electronics and many-body physics. The understanding gained from studying these interactions can facilitate the design of optoelectronic devices. Recently, we have used optical two-dimensional Fourier-transform spectroscopy to explore coherent light-matter interactions in semiconductor quantum wells. Using three laser pulses to generate a four-wave-mixing signal, we acquire spectra by tracking the phase of the signal with respect to two time axes and then Fourier transforming them. In this Account, we show several two-dimensional projections and demonstrate techniques to isolate different contributions to the coherent response of semiconductors. The low-temperature spectrum of semiconductor quantum wells is dominated by excitons, which are electron-hole pairs bound through Coulombic interactions. Excitons are sensitive to their electronic and structural environment, which influences their optical resonance energies and line widths. In near perfect quantum wells, a small fluctuation of the quantum well thickness leads to spatial localization of the center-of-mass wave function of the excitons and inhomogeneous broadening of the optical resonance. The inhomogeneous broadening often masks the homogeneous line widths associated with the scattering of the excitons. In addition to forming excitons, Coulombic correlations also form excitonic molecules, called biexcitons. Therefore, the coherent response of the quantum wells encompasses the intra-action and interaction of both excitons and biexcitons in the presence of inhomogeneous broadening. Transient four-wave-mixing studies combined with microscopic theories have determined that many-body interactions dominate the strong coherent response from quantum wells. Although the numerous competing interactions cannot be easily separated in either the spectral or temporal domains, they can be separated using two-dimensional Fourier transform spectroscopy. The most common two-dimensional Fourier spectra are S(I)(omega(tau),T,omega(t)) in which the second time period is held fixed. The result is a spectrum that unfolds congested one-dimensional spectra, separates excitonic pathways, and shows which excitons are coherently coupled. This method also separates the biexciton contributions and isolates the homogeneous and inhomogeneous line widths. For semiconductor excitons, the line shape in the real part of the spectrum is sensitive to the many-body interactions, which we can suppress by exploiting polarization selection rules. In an alternative two-dimensional projection, S(I)(tau,omega(Tau),omega(t)), the nonradiative Raman coherent interactions are isolated. Finally, we show S(III)(tau,omega(Tau),omega(t)) spectra that isolate the two-quantum coherences associated with the biexciton. These spectra reveal previously unobserved many-body correlations.
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http://dx.doi.org/10.1021/ar9000636 | DOI Listing |
Nanotechnology
January 2025
Radiophysics, Tomsk State University, Lenin, 36, Tomsk, Tomsk region, 634050, RUSSIAN FEDERATION.
Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics.
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December 2024
Centro de Investigación en Ciencias-IICBA, Universidad Autónoma del Estado de Morelos, Cuernavaca 62209, Mexico.
The energy positions and wave function shapes of the ground and excited states of impurities, including resonance states, are studied using the expansion of the impurity wave function in basis functions. The structures under study are rectangular GaAs/AlGaAs quantum wells with four different widths. In all cases, the impurity binding energy (relative to the corresponding sub-band) has a maximum at or near the center of the quantum well, decreases as the heterointerface is approached, and apparently has a limit of 0 if the impurity moves deeper into the barrier.
View Article and Find Full Text PDFNanoscale
January 2025
The Canter for Photochemical Sciences and Department of Physics, Bowling Green State University, Bowling Green, Ohio 43403, USA.
Laser diodes based on solution-processed semiconductor quantum dots (QDs) present an economical and color-tunable alternative to traditional epitaxial lasers. However, their efficiency is significantly limited by non-radiative Auger recombination, a process that increases lasing thresholds and diminishes device longevity through excessive heat generation. Recent advancements indicate that these limitations can be mitigated by employing spherical quantum wells, or quantum shells (QSs), in place of conventional QDs.
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December 2024
School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
We observed tunable characteristics of optical frequency combs (OFCs) generated from InGaAs/GaAs double quantum wells (DQWs) asymmetric waveguide two-section mode-locked lasers (TS-MLLs). This involves an asymmetric waveguide mode-locked semiconductor laser (AWML-SL) operating at a center wavelength of net modal gain of approximately 1.06 µm, which indicates a stable pulse shape, with the power-current(P-I) characteristic curve revealing a small difference between forward and reverse drive currents in the gain region.
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December 2024
School of Microelectronics, Northwestern Polytechnical University, Xi'an 710129, China.
Serious electron leakage and poor hole injection efficiency are still challenges for deep ultraviolet AlGaN-based light-emitting diodes with a traditional structure in achieving high performance. Currently, the majority of research works concentrate on optimizing the structures of the electron blocking layer (EBL) and last quantum barrier (LQB) separately, rather than considering them as an integrated structure. Therefore, in this study, an Al-content-varied AlGaN composite last quantum barrier (CLQB) layer is proposed to replace the traditional EBL and LQB layers.
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