AI Article Synopsis
- The text discusses Silicon p(+)-i-n(+) diode Mach-Zehnder electrooptic modulators that are highly compact, measuring only 100 to 200 micrometers.
- These modulators have a strong performance, highlighted by a V(pi)L figure of merit of 0.36 V-mm, indicating high modulation efficiency.
- They can handle optical modulation at speeds up to 10 Gb/s while consuming very little RF power, specifically just 5 picojoules per bit.
Article Abstract
Silicon p(+)-i-n(+) diode Mach-Zehnder electrooptic modulators having an ultra-compact length of 100 to 200 mum are presented. These devices exhibit high modulation efficiency, with a V(pi)L figure of merit of 0.36 V-mm. Optical modulation at data rates up to 10 Gb/s is demonstrated with low RF power consumption of only 5 pJ/bit.
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| http://dx.doi.org/10.1364/oe.15.017106 | DOI Listing |
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