We report on evanescently coupled Ge waveguide photodetectors that are grown on top of Si rib waveguides. A Ge waveguide detector with a width of 7.4mum and length of 50 mum demonstrated an optical bandwidth of 31.3 GHz at -2V for 1550nm. In addition, a responsivity of 0.89 A/W at 1550 nm and dark current of 169 nA were measured from this detector at -2V. A higher responsivity of 1.16 A/W was also measured from a longer Ge waveguide detector (4.4 x 100 mum2), with a corresponding bandwidth of 29.4 GHz at -2V. An open eye diagram at 40 Gb/s is also shown.
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http://dx.doi.org/10.1364/oe.15.013965 | DOI Listing |
Nanomaterials (Basel)
January 2025
State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China.
The integration of a photodetector that converts optical signals into electrical signals is essential for scalable integrated lithium niobate photonics. Two-dimensional materials provide a potential high-efficiency on-chip detection capability. Here, we demonstrate an efficient on-chip photodetector based on a few layers of MoTe on a thin film lithium niobate waveguide and integrate it with a microresonator operating in an optical telecommunication band.
View Article and Find Full Text PDFNanophotonics
April 2024
Université Paris-Saclay, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France.
This study reports the experimental demonstration of the first waveguide-integrated SiGe modulator using a PIN diode operating in a wide spectral range of the mid-infrared region. At the wavelength of 10 µm, an extinction ratio up to 10 dB is obtained in injection regime and 3.2 dB in depletion regime.
View Article and Find Full Text PDFThis work presents two circuit-based solutions to enhance the power handling capabilities of waveguide-integrated uni-travelling carrier photodetectors (WG-UTC-PDs). Compared to a baseline WG-UTC-PD, these solutions achieve a fivefold increase in photocurrent before thermal breakdown. First, dual-injection improves the optical power distribution within a baseline WG-UTC-PD, raising the photocurrent threshold before thermal breakdown.
View Article and Find Full Text PDFNanoscale
December 2024
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, People's Republic of China.
The hybrid integration of two-dimensional (2D) materials on various photonic integration platforms has attracted widespread research interest because of the new functionalities enabled by the 2D materials for applications in photodetection, optical modulation and nonlinear optical signal processing. Tellurium is known to have high mobility, and quasi-2D tellurium is stable in air and has a small bandgap that may make it suitable for platform-independent scalable integration of high-performance photodetectors in the infrared band. In this work, we propose and implement a new structure for integrating tellurium with silicon nitride (SiN) waveguides, adding photodetector capability to an otherwise passive waveguide platform.
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