Ultra-thin semiconductor crystals were investigated as nonlinear materials for second-harmonic generation. Nonlinear susceptibilities of sub-micrometer- thick ZnO, GaN, and AlN crystals were measured, and these crystals were used for sub-10-fs pulse measurement by a fringe-resolved autocorrelation method. We found that a one-cycle pulse could be characterized by using these ultra-thin-film crystals.

Download full-text PDF

Source
http://dx.doi.org/10.1364/oe.15.009748DOI Listing

Publication Analysis

Top Keywords

zno gan
8
gan aln
8
aln crystals
8
crystals
5
ultrashort pulse
4
pulse characterization
4
characterization ultra-thin
4
ultra-thin zno
4
crystals ultra-thin
4
ultra-thin semiconductor
4

Similar Publications

The escalating global problem of antibiotic contamination in wastewater demands innovative and sustainable remediation technologies. This paper presents a highly efficient photocatalytic material for water purification: a three-dimensional ultra-porous structure of interconnected GaN hollow microtetrapods (aero-GaN), its performance being further enhanced by noble metal nanodot functionalization. This novel aero-nanomaterial achieves more than 90 % of tetracycline degradation within 120 min under UV and solar irradiation, demonstrating its effectiveness in both static and dynamic flow conditions, with the potential for reuse and recyclability.

View Article and Find Full Text PDF

A surface lattice oxygen-promoted ZnO catalyst for ethanol nonoxidative dehydrogenation.

Chem Commun (Camb)

January 2025

State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun, 130012, China.

The surface lattice oxygen of ZnO was demonstrated to be critical for the nonoxidative dehydrogenation of ethanol, which combines with surface-exposed Zn to effectively produce acetaldehyde and the energy molecule hydrogen.

View Article and Find Full Text PDF

Selective leaching mechanisms of zinc from industrial waste using hybrid acids: Sustainable synthesis of Nano-ZnO.

J Environ Manage

January 2025

Baowu Environmental Technology Wuhan Metal Resources Co., Ltd., Wuhan 430081, PR China.

Zinc-containing dust (ZCD) has received extensive attention because it is a hazardous waste rich in various metals. This study innovatively proposed a hybrid acid leaching agent based on malic acid (MA) and sulfuric acid to selectively extract Zn from ZCD and successfully prepare nano-ZnO materials. The leaching experiments show that among the combinations of various organic acids and sulfuric acid, MA and sulfuric acid are superior in the selective leaching of Zn.

View Article and Find Full Text PDF

Application of novel nanomaterials with dual functions of antimicrobial and remineralization in mouthwashes.

Sci Rep

November 2024

Department of Preventive Dentistry, School and Hospital of Stomatology, Fujian Medical University, Fuzhou, Fujian Province, People's Republic of China.

The study aims to improve the antimicrobial and remineralization-promoting properties of mouthwash by synthesizing novel Ag/ZnO/Oyster Shells nanocomposites and evaluating their anti-caries properties and biosafety in vitro and in vivo, so as to reduce the incidence of caries. The antimicrobial properties of the synthesized Ag/ZnO/Oyster Shell nanocomposites were examined by bacterial inhibition zone, minimum inhibitory concentration, minimum bactericidal concentration, fluorescence staining and scanning electron microscopy. The potential of the materials to promote remineralization of demineralized enamel was detected by scanning electron microscopy, surface microhardness and depth of hard tissue defects, and laser confocal electron microscopy analysis.

View Article and Find Full Text PDF

In this work, Ni/ZnO:Al and Au/ZnO:Al structures are proposed as efficient ohmic contacts to p-GaN. Through a careful selection of deposition parameters and annealing environment, we not only achieve the formation of high-quality ohmic contacts but also gain insights into the interfacial reactions, enhancing the understanding of conventional Ni/Au contact formation on p-GaN. In particular, the notion that the presence of NiO at the interface is enough for an ohmic contact to form is challenged by showing that in fact it has to be NiO formed at the interface from metallic Ni and additional oxygen.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!