The continued scaling of integrated circuits will require advances in intra-chip interconnect technology to minimize delay, density of energy dissipation and cross-talk. We present the first quantitative comparison between the performance of metal wire interconnects, operated in the traditional manner by electric charge and discharge, versus the performance of metal wires operated as surface plasmon waveguides. Surface plasmon wire waveguides have the potential to reduce signal delay, but the high confinement required for low cross-talk amongst high density plasmon wire interconnects significantly increases energy dissipation per transmitted bit, above and beyond that required for electric charge/discharge interconnects at the same density.
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http://dx.doi.org/10.1364/oe.15.004474 | DOI Listing |
Sci Rep
January 2025
Department of Agricultural Engineering, Kongunadu College of Engineering and Technology, Trichy, Tamil Nadu, India.
This study investigates the enhancement of solar cell efficiency using nanofluid cooling systems, focusing on citrate-stabilized and PVP-stabilized silver nanoparticles. Traditional silicon-based and perovskite solar cells were examined to assess the impact of these nanofluids on efficiency improvement and thermal management. A Central Composite Design (CCD) was employed to vary nanoparticle concentration (0.
View Article and Find Full Text PDFCommun Eng
January 2025
Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, PR China.
Conventional electronic chip packaging generates a huge thermal resistance due to the low thermal conductivity of the packaging materials that separate chip dies and coolant. Here we propose and fabricate a closed high-conducting heat chip package based on passive phase change, using silicon carbide which is physically and structurally compatible with chip die materials. Our "chip on vapor chamber" (CoVC) concept realizes rapid diffusion of hot spots, and eliminates the high energy consumption of refrigeration ordinarily required for heat management.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China.
Nanofriction plays an important role in the performance and lifetime of n-type or p-type TMD-based semiconductor nanodevices. However, the mechanism of nanofriction in n-type and p-type TMD semiconductors under an electric field is still blurry. In this paper, monolayers of n-MoSe and p-WSe materials were prepared by chemical vapor deposition (CVD), and their nanofriction behavior under positive electric field was investigated.
View Article and Find Full Text PDFPhys Rev Lett
December 2024
Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, USA.
Negative capacitance (NC) effects in ferroelectrics can potentially break fundamental limits of power dissipation known as "Boltzmann tyranny." However, the origin of transient NC of ferroelectrics, which is attributed to two different mechanisms involving free-energy landscape and nucleation, is under intense debate. Here, we report the coexistence of transient NC and an S-shaped anomaly during the switching of ferroelectric hexagonal ferrites capacitor in an RC circuit.
View Article and Find Full Text PDFJ Am Chem Soc
January 2025
Institute of Materials for Electronics and Energy Technology (i-MEET), Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Martensstraße 7, 91058 Erlangen, Germany.
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