Nonlinear transient absorption bleaching of intense few-cycle terahertz (THz) pulses is observed in photoexcited GaAs using opticalpump--THz-probe techniques. A simple model of the electron transport dynamics shows that the observed nonlinear response is due to THz-electric- field-induced intervalley scattering over sub-picosecond time scales as well as an increase in the intravalley scattering rate attributed to carrier heating. Furthermore, the nonlinear nature of the THz pulse transmission at high peak fields leads to a measured terahertz conductivity in the photoexcited GaAs that deviates significantly from the Drude behavior observed at low THz fields, emphasizing the need to explore nonlinear THz pulse interactions with materials in the time domain.
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http://dx.doi.org/10.1364/oe.17.009620 | DOI Listing |
Nanophotonics
April 2024
FZU - Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 00 Prague 8, Czech Republic.
Time-resolved terahertz spectroscopy is used to investigate formation and ultrafast long-distance propagation of electron-hole plasma in strongly photoexcited GaAs and InP. The observed phenomena involve fundamental interactions of electron-hole system with light, which manifest themselves in two different regimes: a coherent one with the plasma propagation speeds up to /10 (in GaAs at 20 K) and an incoherent one reaching up to /25 (in InP at 20 K), both over a macroscopic distance >100 μm. We explore a broad range of experimental conditions by investigating the two materials, by tuning their band gap with temperature and by controlling the interaction strength with the optical pump fluence.
View Article and Find Full Text PDFNanophotonics
July 2024
Department of Physics, Faculty of Science, Shinshu University, Nagano 390-8621, Japan.
Nanomaterials (Basel)
October 2024
Center for Hybrid Nanostructures (CHyN), University of Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany.
Sci Adv
August 2024
Department of Condensed Matter physics, Weizmann Institute of Science, Rehovot 7610001, Israel.
We study the interaction of a dark exciton Bose-Einstein condensate with the nuclei in gallium arsenide/aluminum gallium arsenide coupled quantum wells and find clear evidence for nuclear polarization buildup that accompanies the appearance of the condensate. We show that the nuclei are polarized throughout the mesa area, extending to regions that are far away from the photoexcitation area and persisting for seconds after the excitation is switched off. Photoluminescence measurements in the presence of radio frequency radiation reveal that the hyperfine interaction between the nuclear and electron spins is enhanced by two orders of magnitude.
View Article and Find Full Text PDFSci Adv
May 2024
Sandia National Laboratories, Livermore, CA, USA.
Understanding the limits of spatiotemporal carrier dynamics, especially in III-V semiconductors, is key to designing ultrafast and ultrasmall optoelectronic components. However, identifying such limits and the properties controlling them has been elusive. Here, using scanning ultrafast electron microscopy, in bulk n-GaAs and p-InAs, we simultaneously measure picosecond carrier dynamics along with three related quantities: subsurface band bending, above-surface vacuum potentials, and surface trap densities.
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