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X-ray critical dimension (XCD) metrology is a highly promising technique for achieving sub-nanometer precision in critical dimension measurements at advanced nodes of integrated circuit manufacturing. Compared to XCD experiments utilizing synchrotron radiation sources, those employing compact X-ray sources encounter challenges like extended testing time and increased uncertainty. To evaluate the influence of experimental conditions on measurement results, we developed an virtual X-ray critical dimension metrology via a Monte Carlo simulation (MC-VXCD).
View Article and Find Full Text PDFTabletop extreme ultraviolet reflectometer for quantitative nanoscale reflectometry, scatterometry, and imaging.
Rev Sci Instrum
December 2023
Department of Physics, JILA, and STROBE NSF Science and Technology Center, University of Colorado Boulder and NIST, Boulder, Colorado 80309, USA.
Imaging using coherent extreme-ultraviolet (EUV) light provides exceptional capabilities for the characterization of the composition and geometry of nanostructures by probing with high spatial resolution and elemental specificity. We present a multi-modal tabletop EUV imaging reflectometer for high-fidelity metrology of nanostructures. The reflectometer is capable of measurements in three distinct modes: intensity reflectometry, scatterometry, and imaging reflectometry, where each mode addresses different nanostructure characterization challenges.
View Article and Find Full Text PDFVelocity and displacement measurements play an important role not only in the process of industrial production and metrology on the ground but also in satellite gravity measurement in space. A high-precision all-fiber heterodyne velocity and displacement interferometer based on digital phase-locked loop (DPLL) Doppler tracking is proposed in this paper. The target velocity is measured by tracking the heterodyne frequency changes of the beat-note signal, and the displacement is obtained by the integrated phase of the Doppler frequency change.
View Article and Find Full Text PDFModern semiconductor structures reach sizes in the nanometer regime. Optical metrology characterizes test structures for the quality assessment of semiconductor fabrication. The limits of radiation to resolve nanometer structure sizes can be overcome by shortening the wavelength.
View Article and Find Full Text PDFThe development of the broad-bandwidth photon sources emitting in the soft X-ray range has attracted great attention for a long time due to the possible applications in high-resolution spectroscopy, nano-metrology, and material sciences. A high photon flux accompanied by a broad, smooth spectrum is favored for the applications such as near-edge X-ray absorption fine structure (NEXAFS), extended X-ray absorption fine structure (EXAFS), or XUV/X-ray coherence tomography (XCT). So far, either large-scale facilities or technologically challenging systems providing only limited photon flux in a single shot dominate the suitable sources.
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