A system based on a picosecond time-gated image intensifier is proposed for non-contact testing of CMOS circuits. The apparatus allows one to record the temporal evolution of the luminescence emitted during transistor switching as a function of the position inside the chip. The system is characterized by an intrinsic parallelism in the spatial dimensions. This feature is noticeable for studying wide sections of complex circuits, like microprocessors and random access memories, where multiple electrical events occur simultaneously. Experiments on a CMOS inverter chain and on a static memory have been carried out, in order to demonstrate the applicability of a picosecond time-gated imager to circuit analysis.
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