We present a practical experimental design for performing photoluminescence (PL) and photoreflectance (PR) measurements of semiconductors with only one PL spectroscopic system. The measurement setup is more cost efficient than typical PL-plus-PR systems. The design of the experimental setup of the PL-PR system is described in detail. Measurements of two actual device structures, a high-electron-mobility transistor (HEMT) and a double heterojunction-bipolar transistor (DHBT), are carried out by using this design. The experimental PL and PR spectra of the HEMT device, as well as polarized-photoreflectance (PPR) spectra of the DHBT structure, are analyzed in detailed and discussed. The experimental analyses demonstrate the well-behaved performance of this PL-PR design.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1364/opex.13.003951 | DOI Listing |
ACS Appl Mater Interfaces
September 2024
Department of Experimental Physics, Wrocław University of Science and Technology, St. Wyspiańskiego 27, 50-370 Wrocław, Poland.
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light source. We investigate here InAs/InGaAlAs quantum dot (QD) structures grown directly on 5° off-cut Si substrate and emitting light at 1.5 μm, compatible with established telecom platform.
View Article and Find Full Text PDFNanoscale
July 2024
Department of Physics and Astronomy & Photon Science Institute, University of Manchester, Manchester, M13 9PL, UK.
The decrease in emission efficiency with increasing drive current density, known as 'droop', of -plane wurtzite InGaN/GaN quantum wells presently limits the use of light-emitting diodes based on them for high brightness lighting applications. InGaN/GaN quantum wells grown in the alternative zincblende phase are free of the strong polarisation fields that exacerbate droop and so were investigated by excitation-dependent photoluminescence and photoreflectance studies. Polarisation-resolved measurements revealed that for all excitation densities studied the emission from such samples largely originates from similar microstructures or combinations of microstructures that form within the quantum well layers.
View Article and Find Full Text PDFMicromachines (Basel)
April 2024
Grupo de Investigación en Teoría de la Materia Condensada, Universidad del Magdalena, Santa Marta 470004, Colombia.
We studied epitaxial GaAs samples doped with Ge and Sn up to 1×1019 cm -3, which were stored in a dry and dark environment for 26 years. The optical response of the GaAs samples was determined through the photoluminescence and photoreflectance techniques, taken at different times: just after their fabrication in 1995, 2001 and 2021. The evolution of defects formed by the action of O 2 in the samples and their correlation with doping with Ge and Sn impurities were studied.
View Article and Find Full Text PDFACS Appl Energy Mater
December 2022
Vytautas Magnus University, K. Donelaičio street 58, 44248Kaunas, Lithuania.
Among inorganic, Earth-abundant, and low-toxicity photovoltaic technologies, SbSe has emerged as a strong material contender reaching over 10% solar cell power conversion efficiency. Nevertheless, the bottleneck of this technology is the high deficit of open-circuit voltage ( ) as seen in many other emerging chalcogenide technologies. Commonly, the loss of is related to the nonradiative carrier recombination through defects, but other material characteristics can also limit the achievable .
View Article and Find Full Text PDFSci Rep
July 2022
Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland.
We present experimental studies on low-temperature ([Formula: see text]) carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells (QWs) with the nominal In content of 3.7% and the Bi ranging from 6 to 8%. The photoreflectance experiment revealed the QW bandgap evolution with [Formula: see text] % Bi, which resulted in the bandgap tunability roughly between 629 and [Formula: see text], setting up the photon emission wavelength between 1.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!