Chemical infiltration during atomic layer deposition: metalation of porphyrins as model substrates.

Angew Chem Int Ed Engl

Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle/Saale, Germany.

Published: September 2009

New uses for ALD: By applying standard metal oxide atomic layer deposition (ALD) to two types of porphyrins, site-specific chemical infiltration of substrate molecules is achieved: Diethylzinc can diffuse into the interior of porphyrin supramolecular structures and induce metalation of the porphyrin molecules from the vapor phase. A = Ph, p-HO(3)SC(6)H(4).

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http://dx.doi.org/10.1002/anie.200900426DOI Listing

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