No bulk GeSn crystal existed prior to this work. Near 10 GPa the two elements resemble each other both electronically and structurally. Synthesis experiments at 10 GPa and 1500 K followed by annealing at 770 K using Ge and Sn starting materials and ex-situ analysis using transmission electron microscopy, scanning electron microscopy, and X-ray diffraction document the recovery of a Ge(0.9)Sn(0.1) solid solution (space group P4(3)2(1)2, a = 6.014 (1) A, c = 7.057 (1) A, Z = 12).
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| http://dx.doi.org/10.1021/ja902466w | DOI Listing |
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