Opt Express
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, ROC.
Published: May 2009
Far-field distributions of GaN-based photonic crystal (PhC) film-transferred light-emitting diodes (FT-LEDs) were investigated. The thickness of the device is about 840 nm. The emission wavelength is around 520 nm. The PhC region is a square lattice with a/lambda around 0.5. Angular-resolved measurements in the Gamma-X and Gamma-M directions were made in the polarized-resolved manner. Guided mode extraction behavior in agreement with the two-dimensional free-photon band calculation was observed. In addition, the pseudo-TM behavior for the non-collinearly coupled modes was observed. The azimuthal-mapping of the angular-resolved spectra revealed the evolution of the collinearly and the non-collinearly coupled modes. Furthermore, the light enhancement of approximately 2.7x and the collimation angle about 102.3 degrees were achieved.
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http://dx.doi.org/10.1364/oe.17.008795 | DOI Listing |
Br J Anaesth
January 2025
Light and Health Research Center, Department of Population Health Science and Policy, Icahn School of Medicine at Mount Sinai, New York, NY, USA. Electronic address:
All-inorganic perovskite materials have been widely used in various devices, including lasers, light-emitting diodes (LEDs), and solar cells, due to their exceptional optoelectronic properties. Devices utilizing high-quality single crystals are anticipated to achieve significantly enhanced performance. In this work, we present a high-performance vertical cavity surface emitting laser (VCSEL) based on a single-crystal CsPbBr microplatelet, fabricated through a simple solution process and sandwiched between two distributed Bragg reflector (DBRs).
View Article and Find Full Text PDFNear-infrared (NIR) phosphor-converted light-emitting diode (pc-LED) has emerged as the most promising NIR light source, highlighting the importance of exploring phosphors with excellent efficiency and sufficient spectral coverage. Herein, a garnet NaCaHfGeO:Cr phosphor with an internal quantum efficiency (IQE) of 79.2% has been developed, which exhibits a relatively long wavelength NIR emission peak at 830 nm and a full width at half maximum (FWHM) of 144 nm.
View Article and Find Full Text PDFMicro light-emitting diodes (µLEDs), crucial for advanced displays and communication systems, face efficiency challenges due to sidewall defects. This study investigates the impact of various passivation layers, including SiO, AlO, and HfO, on AlGaInP-based 620 nm red µLEDs. We fabricated devices with two mesa sizes and demonstrated that atomic layer deposition (ALD) passivation, especially with HfO, significantly enhances performance.
View Article and Find Full Text PDFAdv Mater
January 2025
Institute for Advanced Materials & Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
Laboratory-scale spin-coating techniques are widely employed for fabricating small-size, high-efficiency perovskite solar cells. However, achieving large-area, high-uniformity perovskite films and thus high-efficiency solar cell devices remain challenging due to the complex fluid dynamics and drying behaviors of perovskite precursor solutions during large-area fabrication processes. In this work, a high-quality, pinhole-free, large-area FAPbI perovskite film is successfully obtained via scalable blade-coating technology, assisted by a novel bidirectional Marangoni convection strategy.
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