Broadband superluminescent light emitting diodes are realized by a post-growth annealing process, on modulation p-doped multiple InAs/InGaAs/GaAs quantum dot layer structures, under a GaAs proximity cap. The device exhibits a large and flat emission with spectral width up to 132 nm at 2 mW. This is mainly attributed to the reduction of the energy separation between the ground state and the excited state, in addition to the optical quality of the intermixed modulation p-doped quantum dot materials being comparable to that of the as-grown sample.
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