AI Article Synopsis
- Researchers successfully grew a unique wurtzite (WZ) GaAs nanowire with a zinc blende (ZB) GaAsSb insert using Au-assisted molecular beam epitaxy.
- An abrupt phase transition from WZ GaAs to ZB GaAsSb was observed, with a 4H polytype GaAs phase present above the ZB insert.
- Low temperature microphotoluminescence measurements indicated evidence of quantum confinement of holes within the GaAsSb insert.
Article Abstract
We have demonstrated the growth of a unique wurtzite (WZ) GaAs nanowire (NW) with a zinc blende (ZB) GaAsSb insert by Au-assisted molecular beam epitaxy. An abrupt interface from the WZ GaAs phase to the ZB GaAsSb phase was observed, whereas an intermediate segment of a 4H polytype GaAs phase was found directly above the ZB GaAsSb insert. A possible mechanism for the different phase transitions is discussed. Furthermore, low temperature microphotoluminescence (micro-PL) measurements showed evidence of quantum confinement of holes in the GaAsSb insert.
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| http://dx.doi.org/10.1021/nl802406d | DOI Listing |
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