A thyristor stack for pulsed inductive plasma generation has been developed and tested. The stack design includes a free wheeling diode assembly for current reversal. Triggering of the device is achieved by a high side biased, self supplied gate driver unit using gating energy derived from a local snubber network. The structure guarantees a hard firing gate pulse for the required high dI/dt application. A single fiber optic command is needed to achieve a simultaneous turn on of the thyristors. The stack assembly is used for switching a series resonant circuit with a ringing frequency of 30 kHz. In the prototype pulsed power system described here an inductive discharge has been generated with a pulse duration of 120 micros and a pulse energy of 50 J. A maximum power transfer efficiency of 84% and a peak power of 480 kW inside the discharge were achieved. System tests were performed with a purely inductive load and an inductively generated plasma acting as a load through transformer action at a voltage level of 4.1 kV, a peak current of 5 kA, and a current switching rate of 1 kA/micros.
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http://dx.doi.org/10.1063/1.3095686 | DOI Listing |
It is shown that the use of low-voltage GaAs/AlGaAs thyristors as high-speed and high-current switches in vertical stacks with semiconductor lasers ensures the efficient generation of high-power ns-duration laser pulses. The lasing and current dynamics in vertical stacks based on laser diode mini bar emitting at 1060 nm and a single as well as a double thyristor switch is studied. The possibility is demonstrated that a laser diode mini bar (with 3 laser emitters) together with a single thyristor switch can generate laser pulses with a peak power of 6 W with a duration of 950 ps and a peak current of 12 A for an operating voltage of 28 V.
View Article and Find Full Text PDFRev Sci Instrum
November 2018
Institute of Electrophysics, UB, RAS, Yekaterinburg 620016, Russia.
The results of the investigation involving a thyristor switch triggered in the impact ionization wave mode are presented. This switch is intended for operation as a primary switch in a nanosecond pulse generator with a semiconductor opening switch (SOS). The thyristor switch is based on commercial low-frequency tablet thyristors stacked in a joint assembly of up to 6 pieces connected in series.
View Article and Find Full Text PDFJ Nanosci Nanotechnol
September 2018
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea.
In this paper, the volatile and nonvolatile characteristics of asymmetric dual-gate thyristor random access memory (TRAM) are investigated using the technology of a computer-aided design (TCAD) simulation. Owing to the use of two independent gates having different gate dielectric layers, volatile and nonvolatile memory functions can be realized in a single device. The first gate with a silicon oxide layer controls the one-transistor dynamic random access memory (1T-DRAM) characteristics of the device.
View Article and Find Full Text PDFRev Sci Instrum
April 2010
Plasmaphysics Group, Institute of Applied Physics, Goethe University, Frankfurt am Main 60438, Germany.
In this paper, the design, construction, and test procedure of a closing switch prototype based on thyristors is described. In particular, details are given about the design criteria and about the triggering board architecture, which is a high side biased, self supplied unit using the electrical energy derived from a local snubber network for the gate drive. The structure guarantees a hard firing gate pulse for the required high dI/dt application.
View Article and Find Full Text PDFRev Sci Instrum
March 2009
Plasmaphysics Group, Institute of Applied Physics, Johann-Wolfgang-Goethe University, 60438 Frankfurt am Main, Germany.
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