AI Article Synopsis
- The researchers developed a new method to control the thermoelectric properties of PbSe nanowires using a field-effect gated device.
- They successfully modified the Seebeck coefficient of individual nanowires, enhancing it from 64 to 193 microV x K(-1).
- This technique marks the first instance of adjusting the thermoelectric figure of merit in a single nanowire, potentially benefiting semiconductors that are hard to dope consistently.
Article Abstract
In this Letter, we present a novel strategy to control the thermoelectric properties of individual PbSe nanowires. Using a field-effect gated device, we were able to tune the Seebeck coefficient of single PbSe nanowires from 64 to 193 microV x K(-1). This direct electrical field control of sigma and S suggests a powerful strategy for optimizing ZT in thermoelectric devices. These results represent the first demonstration of field-effect modulation of the thermoelectric figure of merit in a single semiconductor nanowire. This novel strategy for thermoelectric property modulation could prove especially important in optimizing the thermoelectric properties of semiconductors where reproducible doping is difficult to achieve.
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