Reversible metal-semiconductor transition of ssDNA-decorated single-walled carbon nanotubes.

Nano Lett

Department of Physics and Astronomy, FPRD, Institute of Advanced Machinery and Design, School of Mechanical and Aerospace Engineering, Seoul National University, Seoul, Korea.

Published: April 2009

A field effect transistor (FET) measurement of a single-walled carbon nanotube (SWNT) shows a transition from a metallic one to a p-type semiconductor after helical wrapping of DNA. Water is found to be critical to activate this metal-semiconductor transition in the ssDNA-SWNT hybrid. Raman spectroscopy confirms the same change in electrical behaviors. According to our ab initio calculations, a band gap can open up in a metallic SWNT with wrapped ssDNA in the presence of water molecules due to charge transfer.

Download full-text PDF

Source
http://dx.doi.org/10.1021/nl8029948DOI Listing

Publication Analysis

Top Keywords

metal-semiconductor transition
8
single-walled carbon
8
reversible metal-semiconductor
4
transition ssdna-decorated
4
ssdna-decorated single-walled
4
carbon nanotubes
4
nanotubes field
4
field transistor
4
transistor fet
4
fet measurement
4

Similar Publications

2D metallic transition metal dichalcogenides: promising contact metals for 2D GaN-based (opto)electronic devices.

Phys Chem Chem Phys

January 2025

Jiangxi Provincial Key Laboratory of Advanced Electronic Materials and Devices, Jiangxi Science & Technology Normal University, Nanchang 330018, China.

Owing to their high light absorption coefficient, excellent electronic mobility, and enhanced excitonic effect, two-dimensional (2D) GaN materials hold great potential for applications in optoelectronic and electronic devices. As the metal-semiconductor junction (MSJ) is a fundamental component of semiconductor-based devices, identifying a suitable metal for contacting semiconductors is essential. In this work, detailed first-principles calculations were performed to investigate the contact behavior between the GaN monolayer (ML) and a series of 2D metals MX (M = Nb, Ta, V, Mo, or W; X = S or Se).

View Article and Find Full Text PDF

Materials exhibiting both metallic and semiconducting states, including two-dimensional transition metal dichalcogenides (TMDs), have numerous applications. We therefore investigate the effects of axial and shear strains on the phase energetics of pristine and striped TMDs using density functional theory and classical molecular dynamics simulations. We demonstrate that control of the phase distribution can be achieved by the integration of strain engineering and Kirigami techniques.

View Article and Find Full Text PDF

Modulating electronic properties in hydrogenated silicon nanotubes.

Phys Chem Chem Phys

January 2025

Department of Energy and Refrigerating Air-Conditioning Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, Taiwan.

This study employs first-principles calculations to investigate the geometric and electronic properties of hydrogenated silicon nanotubes (SiNTs). SiNTs, particularly in their gear-like configuration, demonstrate unique semiconducting behavior; however, their relatively small intrinsic band gaps limit their applicability in fields requiring moderate band gaps. Significant changes in electronic properties are observed by hydrogenating SiNTs at various levels of adsorption-either full or partial-and different surface configurations (exterior, interior, or dual-sided).

View Article and Find Full Text PDF

Symmetry Engineering in a 2D Transition Metal Enables Reconfigurable P- and N-Type FETs.

Nano Lett

January 2025

Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, North Carolina 27514, United States.

Two-dimensional (2D) transition metals enable the elimination of metal-induced gap states and Fermi-level pinning in field-effect transistors (FETs), offering an advantage over conventional metal contacts. However, transition metal substrates typically exhibit nonoriented behaviors, leading to the inability to achieve monolingual responses with P- or N-type semiconductors. Here we devise symmetry engineering in an oxidized architectural MXene, termed OXene, which implements the exploiting and coupling of additional out-of-plane electron conduction and built-in polar structures.

View Article and Find Full Text PDF

Surface-enhanced Raman spectroscopy (SERS) is a powerful analytical technique, yet it faces challenges with certain probe molecules exhibiting weak or inactive signals, limiting their applicability. In a recent study, we investigated this phenomenon using a set of four probe molecules─chloramphenicol (CAP), 4-nitrophenol (4-NP), amoxicillin (AMX), and furazolidone (FZD)─deposited on Ag-based nanostructured SERS substrates. Despite being measured under identical conditions, CAP and 4-NP exhibited SERS activity, while AMX and FZD did not.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!