We describe an adaptive grid method-of-lines (MOL) solution procedure for modelling charge transport and recombination in organic semiconductor devices. The procedure we describe offers an efficient, robust and versatile means of simulating semiconductor devices that allows for much simpler coding of the underlying equations than alternative simulation procedures. The MOL technique is especially well-suited to modelling the extremely stiff (and hence difficult to solve) equations that arise during the simulation of organic-and some inorganic-semiconductor devices. It also has wider applications in other areas, including reaction kinetics, combustion and aero- and fluid dynamics, where its ease of implementation also makes it an attractive choice. The MOL procedure we use converts the underlying semiconductor equations into a series of coupled ordinary differential equations (ODEs) that can be integrated forward in time using an appropriate ODE solver. The time integration is periodically interrupted, the numerical solution is interpolated onto a new grid that is better matched to the solution profile, and the time integration is then resumed on the new grid. The efficacy of the simulation procedure is assessed by considering a single layer device structure, for which exact analytical solutions are available for the electric potential, the charge distributions and the current-voltage characteristics. Two separate state-of-the-art ODE solvers are tested: the single-step Runge-Kutta solver Radau5 and the multi-step solver ODE15s, which is included as part of the Matlab ODE suite. In both cases, the numerical solutions show excellent agreement with the exact analytical solutions, yielding results that are accurate to one part in 1 x 10(4). The single-step Radau5 solver, however, is found to provide faster convergence since its efficiency is not compromised by the periodic interruption of the time integration when the grid is updated.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1039/b813810a | DOI Listing |
ACS Appl Mater Interfaces
January 2025
CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India.
In the past decade, significant efforts have been made to develop efficient half-Heusler (HH) based thermoelectric (TE) materials. However, their practical applications remain limited due to various challenges occurring during the fabrication of TE devices, particularly the development of stable contacts with low interfacial resistance. In this study, we have made an effort to explore a stable contact material with low interfacial resistance for an n-type TiCoSb-based TE material, specifically TiNbCoSbBi as a proof of concept, using a straightforward facile synthesis route of spark plasma sintering.
View Article and Find Full Text PDFNano Lett
January 2025
Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
The ferroelectric tunnel junction (FTJ) is a competitive candidate for post-Moore nonvolatile memories due to its low power consumption and nonvolatility, with its performance being strongly dependent on the conditions for contact between the ferroelectric material and the metal electrode. The development of two-dimensional materials in recent years has offered new opportunities such as functional metal layers, which is challenging for traditional FTJ systems. Here, we introduce the newly discovered ferroelectric metal WTe as the electrode to construct WTe/α-InSe/Au ferroelectric semiconductor junctions.
View Article and Find Full Text PDFNano Lett
January 2025
Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China.
Two-dimensional ferroelectric materials can generate a bulk photovoltaic effect, making them highly promising for self-powered photodetectors. However, their practical application is limited by a weak photoresponse due to a weak transition strength and wide band gap. In this study, we construct a van der Waals heterojunction using NbOI, which has significant in-plane polarization, with a highly absorbing MoSe layer.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
School of Physics and Electronics, Shandong Normal University, 250358 Jinan, China.
Fluorinated graphdiyne (F-GDY) materials exhibit exceptional performance in various applications, such as luminescent devices, electron transport, and energy conversion. Although F-GDY has been successfully synthesized, there is a lack of comprehensive identification of fluorinated configurations, either by theory or experiment. In this work, we investigated seven representative F-GDY configurations with low dopant concentrations and simulated their carbon and fluorine 1s X-ray photoelectron spectroscopy (XPS) and carbon 1s near-edge X-ray absorption fine-structure (NEXAFS) spectra.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, Xi'an 710071, PR China.
Commercial SnO nanocrystals used for producing electron transporting layers (ETLs) of perovskite solar cells (PSC) are prone to aggregation at room temperature and contain many structural defects. Herein, we report that the LiOH additive can simultaneously delay the aggregation and donate the beneficial aging effect to SnO nanocrystals. The resulting SnO ETLs show the desired characteristics, including a broadened absorption range, reduced defects, improved transporting properties, and decreased work function.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!