In this article, the exposure to radio frequency electromagnetic fields was studied in close proximity (distances of 10, 100, 300, and 600 mm) to six base station antennas. The specific absorption rate (SAR) in 800 mm x 500 mm x 200 mm box phantom as well as unperturbed electric field (E) in air was measured. The results were used to determine whether the measurement of local maximum of unperturbed electric field can be used as a compliance check for local exposure. Also, the conservativeness of this assessment method compared to the ICNIRP basic restriction was studied. Moreover, the assessment of whole-body exposure was discussed and the distance ranges presented in which the ICNIRP limit for local exposure could be exceeded before the limit for whole-body SAR. These results show that the electric field measurement alone can be used for easy compliance check for the local exposure at all distances and for all antenna types studied. However, in some cases when the local peak value of E was compared directly to the ICNIRP reference level for unperturbed E, the exposure was overestimated only very slightly (by factor 1.1) compared to the basic restriction for localized SAR in a human, and hence these results can not be generalized to all antenna types. Moreover, it was shown that the limit for localized exposure could be exceeded before the limit for the whole-body average SAR, if the distance to the antenna was less than 240 mm.
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http://dx.doi.org/10.1002/bem.20478 | DOI Listing |
Mater Horiz
January 2025
School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, University of Science and Technology Beijing, Beijing 100083, China.
Realizing spin-orbit torque (SOT)-driven magnetization switching offers promising opportunities for the advancement of next-generation spintronics. However, the relatively low charge-spin conversion efficiency accompanied by an ultrahigh critical switching current density () remains a significant obstacle to the further development of SOT-based storage elements. Herein, spin absorption engineering at the ferromagnet/nonmagnet interface is firstly proposed to achieve high SOT efficiency in Pt/Co/Ir trilayers.
View Article and Find Full Text PDFJ Vis Exp
January 2025
School of Acupuncture-Moxibustion and Tuina, Beijing University of Chinese Medicine;
Electroacupuncture (EA) is one of the most commonly used methods in acupuncture and has a good effect on pain, depression, sensory movement disorders, and other diseases. The effectiveness of EA is influenced by many factors, such as the accuracy of acupoint selection, the duration and course of EA treatment, and EA parameters. However, it has rarely been discussed whether the positive and negative electrodes of the EA instrument with acupoints at different locations and distances have an effect on the curative effect.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Chemistry, Wayne State University, Detroit, Michigan 48202, United States.
The widespread use of gadolinium-based contrast agents for magnetic resonance imaging (MRI) in recent decades has led to a growing demand for Gd and raised environmental concerns due to their direct discharge into wastewater systems. In response, we developed an electrochemical filtration method to recover Gd from patient urine following contrast-enhanced MRI. This method involves modifying a conventional vacuum filtration apparatus by introducing electrodes into the filter membrane, creating a strong electric field of ∼5 kV/m and a steep three-zone pH gradient within the filter membrane.
View Article and Find Full Text PDFNanoscale
January 2025
State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710049, China.
Two-dimensional (2D) organic-inorganic halide perovskites are promising sensitive materials for optoelectronic applications due to their strong light-matter interactions, layered structure, long carrier lifetime and diffusion length. However, a high gate bias is indispensable for perovskite-based phototransistors to optimize detection performances, since ion migration seriously screens the gate electric field and the deposition process introduces intrinsic defects, which induces severe leakages and large power dissipation. In this work, an ultrasensitive phototransistor based on the (PEA)SnI perovskite and the Al:HfO ferroelectric layer is meticulously studied, working without an external gate voltage.
View Article and Find Full Text PDFNanoscale
January 2025
School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
Ammonium perchlorate (AP) is widely utilized in aerospace, defense and other fields due to its high energy density, exceptional stability, easy availability and adaptability. However, the high sensitivity and hygroscopicity of AP severely constrain its application in numerous fields. In this study, a two-step continuous coating method was employed to construct AP-based energetic microcapsules with low sensitivity and hygroscopicity.
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