High-n Rydberg time-of-flight spectroscopy has been used to study the 193.3 nm photolysis of AsH(3). The center-of-mass translational energy distribution for the 1-photon process, AsH(3) + h nu --> AsH(2) + H, P(E(c.m.)), indicates that AsH(2) internal excitation accounts for approximately 64% of the available energy [i.e., h nu - D(0)(H(2)As - H)]. Secondary AsH(2) photodissociation also takes place. Analyses of superimposed structure atop the broad P(E(c.m.)) distribution suggest that AsH(2) is formed with significant a-axis rotation as well as bending excitation. Comparison of the results obtained with AsH(3) versus those of the lighter group-V hydrides (NH(3), PH(3)) lends support to the proposed mechanisms. Of the group-V hydrides, AsH(3) lies intermediate between the nonrelativistic and relativistic regimes, requiring high-level electronic structure theory.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/jp8094769 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Tuning the Properties of Thin-Film TaRu for Hydrogen-Sensing Applications.
ACS Appl Mater Interfaces
February 2023
Faculty of Applied Sciences, Delft University of Technology, Mekelweg 15, 2629 JBDelft, The Netherlands.
Article Synopsis
- * Alloying materials like tantalum (Ta) with ruthenium (Ru) can enhance the properties of hydrogen-sensing materials, allowing better control over their sensitivity and response to hydrogen concentrations.
- * The study shows that incorporating Ru into Ta creates a stable solution, affecting how the material absorbs hydrogen and enabling a tunable sensing range that can respond across a wide range of pressures efficiently.
Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires.
Nanomaterials (Basel)
April 2020
Kronverkskiy prospekt 49, ITMO University, 197101 Saint Petersburg, Russia.
III-V nanowires grown by the vapor-liquid-solid method often show self-regulated oscillations of group V concentration in a catalyst droplet over the monolayer growth cycle. We investigate theoretically how this effect influences the electron-to-hole ratio in Si-doped GaAs nanowires. Several factors influencing the As depletion in the vapor-liquid-solid nanowire growth are considered, including the time-scale separation between the steps of island growth and refill, the "stopping effect" at very low As concentrations, and the maximum As concentration at nucleation and desorption.
View Article and Find Full Text PDFStructural, electronic, vibrational, and superconducting properties of hydrogenated chlorine.
J Chem Phys
August 2018
Institute of Physics, Czȩstochowa University of Technology, Ave. Armii Krajowej 19, 42-200 Czȩstochowa, Poland.
Recent measurements have set a new record for the superconducting transition temperature ( ) at which a material losses electrical resistivity and exhibits ideal diamagnetism. Theory-oriented experiments show that the compressed hydride of Group VI (hydrogen sulfide, HS) exhibits a superconducting state at 203 K. Moreover, a Group V hydride (phosphorus hydride, PH) has also been studied and its reached a maximum of 103 K.
View Article and Find Full Text PDFA photoionization mass spectroscopic study on the formation of phosphanes in low temperature phosphine ices.
Phys Chem Chem Phys
November 2015
Department of Chemistry, University of Hawaii at Manoa, Honolulu, Hawaii 96822, USA.
Isovalency rationalizes fundamental chemical properties of elements in the same group, but often fails to account for differences in the molecular structure due to the distinct atomic sizes and electron-pair repulsion of the isovalent atoms. With respect to main group V, saturated hydrides of nitrogen are limited to ammonia (NH3) and hydrazine (N2H4) along with ionic and/or metal-bound triazene (N3H5) and potentially tetrazene (N4H6). Here, we present a novel approach for synthesizing and detecting phosphanes formed via non-classical synthesis exploiting irradiation of phosphine ices with energetic electrons, subliming the newly formed phosphanes via fractionated sublimation, and detecting these species via reflectron time-of-flight mass spectrometry (ReTOF) coupled with vacuum ultraviolet (VUV) single photon ionization.
View Article and Find Full Text PDFA general approach for sharp crystal phase switching in InAs, GaAs, InP, and GaP nanowires using only group V flow.
Nano Lett
September 2013
Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden.
III-V-based nanowires usually exhibit random mixtures of wurtzite (WZ) and zinc blende (ZB) crystal structure, and pure crystal phase wires represent the exception rather than the rule. In this work, the effective group V hydride flow was the only growth parameter which was changed during MOVPE growth to promote transitions from WZ to ZB and from ZB to WZ. Our technique works in the same way for all investigated III-Vs (GaP, GaAs, InP, and InAs), with low group V flow for WZ and high group V flow for ZB conditions.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!