Optical bistability in a GaAs-based polariton diode.

Phys Rev Lett

CNRS-Laboratoire de Photonique et Nanostructures, Route de Nozay, 91460 Marcoussis, France.

Published: December 2008

AI Article Synopsis

  • The study highlights a novel optical nonlinearity found in a polariton p-i-n microcavity, showcasing a unique switching mechanism between strong and weak coupling regimes.
  • By manipulating the electric field in the cavity, researchers observed bistable cycles, which require significantly lower optical power levels compared to traditional Kerr-induced bistability.
  • Additionally, the presence of switching fronts that move across a large surface area (300 x 300 micrometers) is demonstrated, indicating a fascinating new behavior in optical materials.

Article Abstract

We report on a new type of optical nonlinearity in a polariton p-i-n microcavity. Abrupt switching between the strong and weak coupling regime is induced by controlling the electric field within the cavity. As a consequence, bistable cycles are observed for low optical powers (2-3 orders of magnitude less than for Kerr induced bistability). Signatures of switching fronts propagating through the whole 300 x 300 microm2 mesa surface are evidenced.

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http://dx.doi.org/10.1103/PhysRevLett.101.266402DOI Listing

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