Photoinduced metal-to-insulator transition in a manganite thin film.

Phys Rev Lett

Research Center for Advanced Science and Technology (RCAST), University of Tokyo, Tokyo, Japan.

Published: October 2008

A persistent photoinduced metal-to-insulator transition has been confirmed in a manganite thin film, Pr_(0.55)(Ca_(0.75)Sr_(0.25))_(0.45)MnO3, near a multicritical point by monitoring with transport measurements and x-ray photoemission spectroscopy. Together with the previously reported reverse effect, the photoinduced insulator-to-metal transition, it is found that the relative stability of the metallic and insulating phases interchanges around 80 K in the middle of a very wide hysteresis loop, which is a manifestation of the large potential barrier due to the long-range elastic energy. It is shown that photons are much more effective in overcoming the barrier via the electronically excited intermediate states than via the heat mode.

Download full-text PDF

Source
http://dx.doi.org/10.1103/PhysRevLett.101.177403DOI Listing

Publication Analysis

Top Keywords

photoinduced metal-to-insulator
8
metal-to-insulator transition
8
manganite thin
8
thin film
8
transition manganite
4
film persistent
4
persistent photoinduced
4
transition confirmed
4
confirmed manganite
4
film pr_055ca_075sr_025_045mno3
4

Similar Publications

Polarization-dependent photoinduced metal-insulator transitions in manganites.

Sci Bull (Beijing)

January 2024

State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China; Shanghai Research Center for Quantum Sciences, Shanghai 201315, China; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China; Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China; Shanghai Branch, CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, Shanghai 201315, China. Electronic address:

In correlated oxides, collaborative manipulation on light intensity, wavelength, pulse duration and polarization has yielded many exotic discoveries, such as phase transitions and novel quantum states. In view of potential optoelectronic applications, tailoring long-lived static properties by light-induced effects is highly desirable. So far, the polarization state of light has rarely been reported as a control parameter for this purpose.

View Article and Find Full Text PDF

Laser-induced changes of nonlinear electronic transport properties in LaBaMnO and (LaPr)CaMnO.

J Phys Condens Matter

January 2018

I. Physikalisches Institut, Georg-August-Universität, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.

We report photoinduced effects in nonlinear third harmonic ac electric transport-which is a measure for the density of correlated polarons-in thin films of [Formula: see text] (LBMO) and [Formula: see text] (LPCMO) manganites. Both materials show an enhancement of third harmonic voltage in the vicinity of the metal-to-insulator transition, indicating strong electron-lattice correlations within a phase-separated state. Relatively low laser excitation with a pulse fluence of [Formula: see text] leads to an increase (decrease) in nonlinearity in LBMO (LPCMO).

View Article and Find Full Text PDF

Metal-to-insulator transition induced by UV illumination in a single SnO nanobelt.

Nanotechnology

November 2017

Departamento Acadêmico de Física (DAFIS), Universidade Tecnológica Federal do Paraná, Av. Sete de Setembro 3165, Rebouças, 80230-901, Curitiba/PR-Brazil. Departamento de Física, Universidade Federal de Minas Gerais, Av. Pres. Antônio Carlos, 6627, Pampulha, 31270-901, Belo Horizonte/MG-Brazil.

An individual tin oxide (SnO) nanobelt was connected in a back-gate field-effect transistor configuration and the conductivity of the nanobelt was measured at different temperatures from 400 K to 4 K, in darkness and under UV illumination. In darkness, the SnO nanobelts showed semiconductor behavior for the whole temperature range measured. However, when subjected to UV illumination the photoinduced carriers were high enough to lead to a metal-to-insulator transition (MIT), near room temperature, at T  = 240 K.

View Article and Find Full Text PDF

Evidence for Photoinduced Insulator-to-Metal transition in B-phase vanadium dioxide.

Sci Rep

May 2016

Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.

Ultrafast optical studies have been performed on epitaxial films of the novel B-phase of vanadium dioxide using temperature-dependent optical pump-probe technique. Signature of temperature-driven metal-to-insulator transition was distinctly observed in the ultrafast dynamics - the insulating phase showed two characteristic electronic relaxation times while the metallic phase showed only one. Beyond a threshold value of the pump fluence, the insulating state collapses into a 'metallic-like' phase which can be further subdivided into two regimes according to the lengths of the fast characteristic time.

View Article and Find Full Text PDF

Photoinduced metal-to-insulator transition in a manganite thin film.

Phys Rev Lett

October 2008

Research Center for Advanced Science and Technology (RCAST), University of Tokyo, Tokyo, Japan.

A persistent photoinduced metal-to-insulator transition has been confirmed in a manganite thin film, Pr_(0.55)(Ca_(0.75)Sr_(0.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!