It is shown that the growth of II-VI diluted magnetic semiconductor nanowires is possible by the catalytically enhanced molecular beam epitaxy (MBE). Zn(1-x)MnxTe NWs with manganese content up to x=0.60 were produced by this method. X-ray diffraction, Raman spectroscopy, and temperature dependent photoluminescence measurements confirm the incorporation of Mn(2+) ions in the cation substitutional sites of the ZnTe matrix of the NWs.

Download full-text PDF

Source
http://dx.doi.org/10.1021/nl802449gDOI Listing

Publication Analysis

Top Keywords

diluted magnetic
8
magnetic semiconductor
8
semiconductor nanowires
8
molecular beam
8
beam epitaxy
8
zn1-xmnxte diluted
4
nanowires grown
4
grown molecular
4
epitaxy growth
4
growth ii-vi
4

Similar Publications

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!