Double phase conjugate mirror using Sn2P2S6 for injection locking of a laser diode bar.

We demonstrate double phase-conjugation in pure and Te-doped Sn(2)P(2)S(6), a semiconducting ferroelectric material, at the wavelength of 685 nm. We observe a phase conjugate reflectivity of more than 800% at an intensity ratio of the pump beams of 44 for Te-doped Sn(2)P(2)S(6). Using a laser diode bar emitting at 685 nm, we demonstrate double phase conjugation of three independent emitters of the laser diode bar with a single mode master laser. By adjusting the center wavelength of the master laser to the center wavelength of an emitter with an accuracy of less than 0.1 nm, locking of any emitter of the laser diode bar is demonstrated. We improve the spectral width of the emitter from 0.5 nm to below 2.5 x 10(-4) nm.