A poly(3-dodecylthiophene-2,5-diyl) film having in-plane anisotropic molecular arrangement was successfully fabricated by transferring its Langmuir-Blodgett film onto a step-bunched Si(111) substrate. Polarized near-edge X-ray absorption fine structure measurements revealed that the polythiophene main chains are preferentially orientated along periodic facet/terrace nanostructures on the step-bunched substrate, whereas less anisotropy was found on a flat substrate. The step-bunched Si substrate has been proved to be effective for controlling the in-plane molecular arrangement in the polymer thin film.
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http://dx.doi.org/10.1021/la8016722 | DOI Listing |
Nanotechnology
January 2025
Centre for Analysis and Synthesis, NanoLund, Lund University, Box 124, Lund, 221 00, SWEDEN.
Developing a reliable procedure for the growth of III-V nanowires (NW) on silicon (Si) substrates remains a significant challenge, as current methods rely on trial-and-error approaches with varying interpretations of critical process steps such as sample preparation, Au-Si alloy formation in the growth reactor, and nanowire alignment. Addressing these challenges is essential for enabling high-performance electronic and optoelectronic devices that combine the superior properties of III-V NW semiconductors with the well-established Si-based technology. Combining conventional scalable growth methods, such as Metalorganic Chemical Vapor Deposition (MOCVD) with in situ characterization using Environmental Transmission Electron Microscopy (ETEM-MOCVD) enables a deeper understanding of the growth dynamics, if that knowledge is transferable to the scalable processes.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 8410501, Israel.
Cuprous oxide (CuO) thin films were chemically deposited from a solution onto GaAs(100) and (111) substrates using a simple three-component solution at near-ambient temperatures (10-60 °C). Interestingly, a similar deposition onto various other substrates including Si(100), Si(111), glass, fluorine-doped tin oxide, InP, and quartz resulted in no film formation. Films deposited on both GaAs(100) and (111) were found alongside substantial etching of the substrates.
View Article and Find Full Text PDFACS Nano
January 2025
Department of Physics, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan.
We have found that surface superstructures made of "monolayer alloys" of Tl and Pb on Si(111), having giant Rashba effect, produce nonreciprocal spin-polarized photocurrent via circular photogalvanic effect (CPGE) by obliquely shining circularly polarized near-infrared (IR) light. CPGE is here caused by the injection of in-plane spin into spin-split surface-state bands, which is observed only on Tl-Pb alloy layers but not on single-element Tl nor Pb layers. In the Tl-Pb monolayer alloys, despite their monatomic thickness, the magnitude of CPGE is comparable to or even larger than the cases of many other spin-split thin-film materials.
View Article and Find Full Text PDFNanotechnology
January 2025
Laboratory of micro- and nanoelectronics, Saint Petersburg Electrotechnical University 'LETI', Prof. Popova st. 5, 197022 St.Petersburg, Russia.
The processes of electrochemical deposition of Ni on vertically aligned GaAs nanowires (NWs) grown by molecular-beam epitaxy (MBE) using Au as a growth catalyst on n-type Si(111) substrates were studied. Based on the results of electrochemical deposition, it was concluded that during the MBE synthesis of NWs the self-induced formation of conductive channels can occur inside NWs, thereby forming quasi core-shell NWs. Depending on the length of the channel compare to the NW heights and the parameters of electrochemical deposition, the different hybrid metal-semiconductor nanostructures, such as Ni nanoparticles on GaAs NW side walls, Ni clusters on top ends of GaAs NWs, core-shell GaAs/Ni NWs, were obtained.
View Article and Find Full Text PDFNanoscale
January 2025
Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea.
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