Nano-scale three dimensional surface relief features using single exposure counterpropagating multiple evanescent waves interference phenomenon.

In this paper, fabrication of nano-scale 3-D features by total internal reflection generated single exposure counter propagating multiple evanescent waves interference lithography (TIR-MEWIL) in a positive tone resist is investigated numerically. Using a four incident plane waves configuration from an 364nm wavelength illumination source, the simulated results indicate that the proposed technique shows potential in realizing periodic surface relief features with diameter as small as 0.08lambda and height-to-diameter aspect ratio as high as 10. It is also demonstrated that the sensitivity of multiple evanescent waves' interference depends on the polarization and phase of the incident plane waves, and can be tailored to obtain different geometry features. A modified cellular automata algorithm has been employed to simulate three-dimensional photoresist profiles that would result from exposure to the studied evanescent waves interference configurations.