Single-walled carbon nanotubes (SWCNTs) are noncovalently functionalised with octaethylporphyrins (OEPs) and the resulting nanohybrids are isolated from the free OEPs. Electron paramagnetic resonance (EPR) spectroscopy of cobalt(II)OEP, adsorbed on the nanotube walls by pi-pi-stacking, demonstrates that the CNTs act as electron acceptors. EPR is shown to be very effective in resolving the different interactions for metallic and semiconducting tubes. Moreover, molecular oxygen is shown to bind selectively to nanohybrids with semiconducting tubes. Water solubilisation of the porphyrin/CNT nanohybrids using bile salts, after applying a thorough washing procedure, yields solutions in which at least 99% of the porphyrins are interacting with the CNTs. Due to this purification, we observe, for the first time, the isolated absorption spectrum of the interacting porphyrins, which is strongly red-shifted compared to the free porphyrin absorption. In addition a quasi-complete quenching of the porphyrin fluorescence is also observed.
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http://dx.doi.org/10.1002/cphc.200800317 | DOI Listing |
Adv Mater
January 2025
Laboratory of Advanced Materials, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China.
Metal single atoms (SA)-support interactions inherently exhibit significant electrochemical activity, demonstrating potential in energy catalysis. However, leveraging these interactions to modulate electronic properties and extend application fields is a formidable challenge, demanding in-depth understanding and quantitative control of atomic-scale interactions. Herein, in situ, off-axis electron holography technique is utilized to directly visualize the interactions between SAs and the graphene surface.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
Department of Energy and Refrigerating Air-Conditioning Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, Taiwan.
This study employs first-principles calculations to investigate the geometric and electronic properties of hydrogenated silicon nanotubes (SiNTs). SiNTs, particularly in their gear-like configuration, demonstrate unique semiconducting behavior; however, their relatively small intrinsic band gaps limit their applicability in fields requiring moderate band gaps. Significant changes in electronic properties are observed by hydrogenating SiNTs at various levels of adsorption-either full or partial-and different surface configurations (exterior, interior, or dual-sided).
View Article and Find Full Text PDFSci Adv
January 2025
Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, PR China.
In-plane anisotropic two-dimensional (2D) semiconductors have gained much interest due to their anisotropic properties, which opens avenues in designing functional electronics. Currently reported in-plane anisotropic semiconductors mainly rely on crystal lattice anisotropy. Herein, AgCrPS (ACPS) is introduced as a promising member to the anisotropic 2D semiconductors, in which, both crystal structure and ion-electron co-modulations are used to achieve tunable in-plane conductance anisotropy.
View Article and Find Full Text PDFACS Nano
January 2025
College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China.
In atomically thin two-dimensional (2D) materials, grain boundaries (GBs) are ubiquitous, displaying a profound effect on the electronic structure of the host lattice. The random configuration of atoms within GBs introduces an arbitrary and unpredictable local electronic environment, which may hazard electron transport. Herein, by utilizing the Pt single-atom chains with an ultimate one-dimensional (1D) feature (width of a single atom and length up to tens of nanometers), we realized the suture of the electron pathway at GBs of diversified transition metal dichalcogenides (TMDCs).
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China.
Heterojunctions (HJs) based on two-dimensional (2D) transition metal dichalcogenides are considered promising candidates for next-generation electronic and optoelectronic devices. Here, vertical (V-type) and lateral (L-type) HJ diodes based on metallic 1T-VSe and semiconducting 2H-WSe with out-of-plane and in-plane contacts are designed. First-principles quantum transport simulations reveal that both V- and L-type VSe/WSe HJ diodes form p-type Schottky contacts.
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