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Inflection of Resistive Switching Behavior in Atomically Precise Silver Cluster-Assembled Materials.
Small
December 2024
School of Chemistry, Indian Institute of Science Education and Research Thiruvananthapuram, Kerala, 695551, India.
Article Synopsis
- Bottom-up design of electronic materials relies on precisely controlling self-assembly, using atomically precise metal nanoclusters (NCs) as modular building blocks.
- A new molecular silver nanocluster (0 D Ag-NC) was assembled into a one-dimensional nanocluster chain (1 D Ag-CAM) using 4,4'-bipyridine linkers, both exhibiting cuboctahedron geometries protected by organic ligands.
- The 1 D Ag-CAM device showed superior resistive switching behavior with increased durability, a higher current ratio, and demonstrated negative differential resistance, underscoring the significance of connecting molecular nanoclusters for improved electronic memory properties.
A fast 2D MoS photodetector with ultralow contact resistance.
Nanoscale
November 2024
School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS), hold great promise for next-generation nanoelectronic and nanophotonic devices. While high photoresponsivity and broad spectral coverage (UV-IR) have been reported, the slow response time of MoS photodetectors caused by their unfavorable RC characteristics is still a major limit in current devices. Once the RC limit issue is resolved, the intrinsic saturation drift velocity of electrons in TMDs (∼10 cm s) may enable GHz opto-electronic operations.
View Article and Find Full Text PDFAnomalous reverse mechanical polarization switching in negative piezoelectric CuInPS.
Mater Horiz
December 2024
School of Materials Science and Engineering, UNSW Sydney, Sydney NSW 2052, Australia.
van der Waals ferroelectric CuInPS (CIPS) has drawn significant attention not only because of its unique properties but also owing to its technological potential for nanoelectronics. Mechanical polarization switching provides a new approach to modulating polarization states through flexoelectricity. This approach is particularly favourable for CIPS to avoid surface damage under an electric field due to the coupling between polarization switching and ionic motion.
View Article and Find Full Text PDFRevealing Fast Negative Capacitance in PbZrTiO Thin Film with Acicular Ferroelastic Domains.
Nano Lett
October 2024
Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, Guangdong, China.
Negative capacitance effects with fast response times hold great potential for reducing the power consumption in high-frequency nanoelectronics. Nevertheless, the negative capacitance effect faces considerable complexity arising from the dynamic interplay among electrostatic, nucleation energies, and domain evolution. This intricate balance poses a formidable challenge to achieving fast negative capacitance.
View Article and Find Full Text PDFSpatial Control of Nickel Vacancies in Colloidal NiMgO Nanocrystals for Efficient and Stable All-inorganic Quantum Dot Light-Emitting Diodes.
Adv Mater
November 2024
Department of Energy Science, Center for Artificial Atoms, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419, Republic of Korea.
Colloidal quantum dot (QD)-based light-emitting diodes (QD-LEDs) have reached the pinnacle of quantum efficiency and are now being actively developed for next-generation displays and brighter light sources. Previous research has suggested utilizing inorganic hole-transport layers (HTLs) to explore brighter and more stable QD-LEDs. However, the performance metrics of such QD-LEDs with inorganic HTLs generally lag behind those of organic-inorganic hybrid QD-LEDs employing organic HTLs.
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