The fact that the resistance of propagating electrons in solids depends on their spin orientation has led to a new field called spintronics. With the parallel advances in nanoscience, it is now possible to talk about nanospintronics. Many works have focused on the study of charge transport along nanosystems, such as carbon nanotubes, graphene nanoribbons, or metallic nanowires, and spin dependent transport properties at this scale may lead to new behaviors due to the manipulation of a small number of spins. Metal nanowires have been studied as electric contacts where atomic and molecular insertions can be constructed. Here we describe what might be considered the ultimate spin device, namely, a Au thin nanowire with one Co atom bridging its two sides. We show that this system has strong spin dependent transport properties and that its local symmetry can dramatically change them, leading to a significant spin polarized conductance.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/ja8020457 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Thermoelectric Properties of a Light Compound FeS: the Role of Electron Correlation Strengthened Spin-Orbital Coupling.
Small
January 2025
Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing, 401331, China.
Spin-orbit coupling (SOC) induced nontrivial bandgap and complex Fermi surface has been considered to be profitable for thermoelectrics, which, however, is generally appreciable only in heavy elements, thereby detrimental to practical application. In this study, the SOC-driven extraordinary thermoelectric performance in a light 2D material Fe₂S₂ is demonstrated via first-principles calculations. The abnormally strong SOC, induced by electron correlation through 3d orbitals polarization, significantly renormalizes the band structures, which opens the bandgap via Fe 3d orbitals inversion, exposes the second conduction valley with weak electron-phonon coupling, and aligns the energy of Fe 3d and S 3p orbitals with divergent momentum in valence band.
View Article and Find Full Text PDFRole of spin-orbit coupling for the band splitting in ⍺-Sb and ⍺-Bi on SiC(0001).
J Phys Condens Matter
January 2025
AIMR, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, 980-8578, JAPAN.
Monolayer atomic thin films of group-V elements have a high potential for application in spintronics and valleytronics because of their unique crystal structure and strong spin-orbit coupling. We fabricated Sb and Bi monolayers on a SiC(0001) substrate by the molecular-beam-epitaxy method and studied the electronic structure by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. The fabricated Sb film shows the (√3×√3)R30º superstructure associated with the formation of ⍺-Sb, and exhibits a semiconducting nature with a band gap of more than 1.
View Article and Find Full Text PDFControllable -Polarized Spin Current in Artificially Structured Ferromagnetic Oxide with Strong Spin-Orbit Coupling.
Nano Lett
January 2025
Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Realizing field-free switching of perpendicular magnetization by spin-orbit torques is crucial for developing advanced magnetic memory and logic devices. However, existing methods often involve complex designs or hybrid approaches, which complicate fabrication and affect device stability and scalability. Here, we propose a novel approach using -polarized spin currents for deterministic switching of perpendicular magnetization through interfacial engineering.
View Article and Find Full Text PDFTwo-Dimensional Nonvolatile Valley Spin Valve.
ACS Nano
January 2025
Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, United States.
A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission, controlled by the relative alignment of magnetic moments of the two ferromagnetic layers. Recently, the advent of valleytronics has conceptualized a valley spin valve (VSV)─a device that utilizes the valley degree of freedom and spin-valley locking to achieve a similar valve effect without relying on magnetism. In this study, we propose a nonvolatile VSV (-VSV) based on a two-dimensional (2D) ferroelectric semiconductor where resistance of -VSV is controlled by a ferroelectric domain wall between two uniformly polarized domains.
View Article and Find Full Text PDFAtomically Precise Fabrication of Ultranarrow Zigzag CuTe Nanoribbons via Dimensional Regulation.
ACS Nano
January 2025
Faculty of Materials Science and Engineering, Kunming University of Science and Technology, No. 68 Wenchang Road, Kunming 650093, China.
Artificial dimension control has been playing a vital role in electronic structure manipulation and properties generation. However, systematic investigations into the dimensional regulation, such as transformation from two-dimensional (2D) materials to well-controlled one-dimensional (1D) ribbons, remain insufficient via molecular beam epitaxy. Here, high-quality ultranarrow zigzag CuTe nanoribbons are atomically precisely prepared via the dimensional regulation induced by adjusting the Te chemical potential, utilizing CuSe monolayer as the starting 2D template.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!