With octahedral Au nanocrystals as seeds, highly monodisperse Au@Pd and Au@Ag core-shell nanocubes were synthesized by a two-step seed-mediated method in aqueous solution. Accordingly, we have preliminarily proposed a general rule that the atomic radius, bond dissociation energy, and electronegativity of the core and shell metals play key roles in determining the conformal epitaxial layered growth mode.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/ja801566d | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Lattice coherency engineering trigger rapid charge transport at the heterointerface of Te/InO@MXene photocatalysts for boosting photocatalytic hydrogen evolution.
J Colloid Interface Sci
January 2025
College of Chemistry and Chemical Engineering, Qiqihar University, Qiqihar 161006, PR China; Heilongjiang Provincial Key Laboratory of Catalytic Synthesis for Fine Chemicals, Qiqihar University, Qiqihar 161006, PR China. Electronic address:
The establishment of heterojunctions has been demonstrated as an effective method to improve the efficiency of photocatalytic hydrogen production. Conventional heterojunctions usually have random orientation relationships, and heterointerfaces can hinder photogenerated carrier transport due to larger lattice mismatches, thus reducing the photoelectric conversion efficiency. In this study, a novel Te/InO@MXene lattice coherency heterojunction was prepared by leveraging the identical lattice spacing of InO (222) and Te (021) crystal face.
View Article and Find Full Text PDFOptimization of In-Situ Growth of Superconducting Al/InAs Hybrid Systems on GaAs for the Development of Quantum Electronic Circuits.
Materials (Basel)
January 2025
CNR-IOM-Istituto Officina dei Materiali, Consiglio Nazionale delle Ricerche, 34149 Trieste, Italy.
Hybrid systems consisting of highly transparent channels of low-dimensional semiconductors between superconducting elements allow the formation of quantum electronic circuits. Therefore, they are among the novel material platforms that could pave the way for scalable quantum computation. To this aim, InAs two-dimensional electron gases are among the ideal semiconductor systems due to their vanishing Schottky barrier; however, their exploitation is limited by the unavailability of commercial lattice-matched substrates.
View Article and Find Full Text PDFDesigns of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers.
Micromachines (Basel)
December 2024
School of Electrical and Electronic Engineering, Pusan National University, Busan 46241, Republic of Korea.
We demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers. Multiple P rings and width-modulated multiple trenches were utilized to alleviate electric-field crowding at the edges of the junction to quantitively control the effective charge (Q) in the termination structures.
View Article and Find Full Text PDFDirect observations of nucleation and early-stage growth of Au-catalyzed GaAs nanowires on Si(111).
Nanotechnology
January 2025
Centre for Analysis and Synthesis, NanoLund, Lund University, Box 124, Lund, 221 00, SWEDEN.
Developing a reliable procedure for the growth of III-V nanowires (NW) on silicon (Si) substrates remains a significant challenge, as current methods rely on trial-and-error approaches with varying interpretations of critical process steps such as sample preparation, Au-Si alloy formation in the growth reactor, and nanowire alignment. Addressing these challenges is essential for enabling high-performance electronic and optoelectronic devices that combine the superior properties of III-V NW semiconductors with the well-established Si-based technology. Combining conventional scalable growth methods, such as Metalorganic Chemical Vapor Deposition (MOCVD) with in situ characterization using Environmental Transmission Electron Microscopy (ETEM-MOCVD) enables a deeper understanding of the growth dynamics, if that knowledge is transferable to the scalable processes.
View Article and Find Full Text PDFLow-Cost Preparation of Wafer-Scale Au(111) Single Crystals for the Epitaxy of Two-Dimensional Layered Materials.
ACS Nano
January 2025
School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China.
Single-crystal Au(111), renowned for its chemically inert surface, long-range "herringbone" reconstruction, and high electrical conductivity, has long served as an exemplary template in diverse fields, , crystal epitaxy, electronics, and electrocatalysis. However, commercial Au(111) products are high-priced and limited to centimeter sizes, largely restricting their broad applications. Herein, a low-cost, high-reproducible method is developed to produce 4 in.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!