Hierarchical nanostructures of lead sulfide nanowires resembling pine trees were synthesized by chemical vapor deposition. Structural characterization revealed a screwlike dislocation in the nanowire trunks with helically rotating epitaxial branch nanowires. It is suggested that the screw component of an axial dislocation provides the self-perpetuating steps to enable one-dimensional crystal growth, in contrast to mechanisms that require metal catalysts. The rotating trunks and branches are the consequence of the Eshelby twist of screw dislocations with a dislocation Burgers vector along the 110 directions having an estimated magnitude of 6 +/- 2 angstroms for the screw component. The results confirm the Eshelby theory of dislocations, and the proposed nanowire growth mechanism could be general to many materials.
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http://dx.doi.org/10.1126/science.1157131 | DOI Listing |
Mater Horiz
January 2025
College of Materials Science & Engineering, Zhejiang University of Technology, Hangzhou 310014, P. R. China.
Developing hydrogels with high conductivity and toughness a facile strategy is important yet challenging. Herein, we proposed a new strategy to develop conductive hydrogels by growing metal dendrites. Water-soluble Sn ions were soaked into the gel and then converted to Sn dendrites an electrochemical reaction; the excessive Sn ions were finally removed by water dialysis, accompanied by dramatic shrinkage of the gel.
View Article and Find Full Text PDFInt J Biol Macromol
January 2025
Department of Physics, Hasanuddin University, Makassar 90245, Indonesia. Electronic address:
The increasing reliance on electronic devices has created a pressing demand for high-performance and sustainable electromagnetic interference shielding materials. While conventional materials, such as metals and carbon-based composites, offer excellent shielding capabilities, they are hindered by high costs, environmental concerns, and limitations in scalability. Polysaccharide-based materials, including cellulose, chitosan, and alginate, represent a promising alternative due to their biodegradability, renewability, and versatility.
View Article and Find Full Text PDFLight Sci Appl
January 2025
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun, 130012, China.
Metal-halide perovskite nanowire array photodetectors based on the solution method are valuable in the field of polarized light detection because of their unique one-dimensional array structure and excellent photoelectric performance. However, the limited wettability of liquids poses challenges for achieving large-scale and high-quality perovskite nanowire arrays. To address this issue, we develop a facile method utilizing capillary condensation to grow high-quality centimeter-scale perovskite nanowire arrays.
View Article and Find Full Text PDFNanotechnology
January 2025
Centre for Analysis and Synthesis, NanoLund, Lund University, Box 124, Lund, 221 00, SWEDEN.
Developing a reliable procedure for the growth of III-V nanowires (NW) on silicon (Si) substrates remains a significant challenge, as current methods rely on trial-and-error approaches with varying interpretations of critical process steps such as sample preparation, Au-Si alloy formation in the growth reactor, and nanowire alignment. Addressing these challenges is essential for enabling high-performance electronic and optoelectronic devices that combine the superior properties of III-V NW semiconductors with the well-established Si-based technology. Combining conventional scalable growth methods, such as Metalorganic Chemical Vapor Deposition (MOCVD) with in situ characterization using Environmental Transmission Electron Microscopy (ETEM-MOCVD) enables a deeper understanding of the growth dynamics, if that knowledge is transferable to the scalable processes.
View Article and Find Full Text PDFNat Commun
January 2025
School of Electronics Science and Engineering/National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, China.
Ultrathin silicon nanowires (diameter <30 nm) with strong electrostatic control are ideal quasi-1D channel materials for high-performance field effect transistors, while a short channel is desirable to enhance driving current. Typically, the patterning of such delicate channels relies on high-precision lithography, which is not applicable for large area electronics. In this work, we demonstrate that ultrathin and short silicon nanowires channels can be created through a local-curvature-modulated catalytic growth, where a planar silicon nanowires is directed to jump over a crossing step.
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