AI Article Synopsis
- Titanium oxide (TiO(2)) thin films were created using three different methods: E-gun evaporation with ion-assisted deposition, RF ion-beam sputtering, and DC magnetron sputtering.
- After annealing, RF ion-beam and DC magnetron films showed reduced residual stress, while the evaporated films did not; their extinction coefficients also varied greatly.
- The evaporated films had higher surface roughness, and crystallization of anatase occurred at 300°C in the evaporated films only, making sputtered films more stable during the annealing process.
Article Abstract
Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.
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| http://dx.doi.org/10.1364/ao.47.00c284 | DOI Listing |
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