We present a photonic crystal cloaking device at optical wavelengths based on the association of two lattices working in different regimes, namely, stop band and negative refraction. The idea is to reconstruct in phase an incident cut Gaussian modulated plane wave by using the photonic crystal dispersion properties to ensure that no light penetrates in the core of the device. It is believed that such a cloaking device could become a building block for future generations of 3D integrated optical circuits.
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http://dx.doi.org/10.1364/ao.47.001358 | DOI Listing |
ACS Appl Mater Interfaces
December 2024
Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310027, China.
Invisibility─the remarkable ability to render objects imperceptible─has long been a persistent dream of humankind. However, traditional cloaking materials are typically rigid and inflexible, limiting their adaptability to various shapes and requirements. Even when flexibility is achieved, uncontrollable scattering in complex electromagnetic environments continues to pose significant challenges in the design of flexible cloaks.
View Article and Find Full Text PDFMaterials (Basel)
October 2024
State Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310027, China.
Metasurfaces, which are ultrathin planar metamaterials arranged in certain global sequences, interact uniquely with the surrounding light field and exhibit unusual effects of light modulation. Many interesting applications have been discovered based on metasurfaces, particularly in invisibility cloaks. However, most invisibility cloaks are limited to working in specific directions.
View Article and Find Full Text PDFNanomicro Lett
October 2024
College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, People's Republic of China.
Developing advanced stealth devices to cope with radar-infrared (IR) fusion detection and diverse application scenarios is increasingly demanded, which faces significant challenges due to conflicting microwave and IR cloaking mechanisms and functional integration limitations. Here, we propose a multiscale hierarchical structure design, integrating wrinkled MXene IR shielding layer and flexible FeO@C/PDMS microwave absorption layer. The top wrinkled MXene layer induces the intensive diffuse reflection effect, shielding IR radiation signals while allowing microwave to pass through.
View Article and Find Full Text PDFSci Rep
September 2024
Department of mathematics, Ghazni University, Ghazni, Afghanistan.
A four level chiral medium is considered to analyze and investigate theoretically the reflection/transmission coefficients of right circularly polarized (RCP) beam and left circularly polarized (LCP) beam as well as their corresponding GH-shifts under the effect of compton scattering. Density matrix formalism is used for calculation of electric and magnetic probe fields coherence. The polarization and magnetization are calculated from probes coherence terms in the chiral medium.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2024
Electrical Engineering, Ingram School of Engineering, Texas State University, San Marcos, Texas 78666, United States.
Thermally induced dielectric and conductivity properties of an Sn-doped β-GaO (-201) single crystal were investigated by frequency-domain impedance spectroscopy in the frequency window from 100 Hz to 1 MHz with temperatures between 293 and 873 K. The (-201) plane-orientated single crystalline nature and the presence of an Sn dopant in β-GaO were confirmed by X-ray diffraction (XRD) and X-ray photoelectron (XPS) spectroscopy. Two different trends of impedance spectra have been discussed by the modulation of relaxation times and semiconductor to metallic transition after ∼723 K due to activation of a significant number of Sn dopants and their movements with temperature.
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