Based on experimental observations for the InAs/InP(001) system and atomistic strain calculations using Keating's valence force field method, we propose a pseudophase diagram describing the regimes of 3D self-organization in quantum dot (QD) multilayers. The combined experimental and theoretical analyses--varying the spacer thickness (H), QD height (h), base (b), and lateral spacing (D)--indicate that the vertically aligned to antialigned transition occurs for a critical value of H/D which increases weakly with b/D, while varying h has virtually no effect on the transition point.
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