An infrared (IR) polarizer with tungsten silicide (WSi) wire grid was fabricated by two-beam interference exposure and reactive ion etching. To enhance TM transmittance, silicon monoxide was deposited between the WSi wire grid (400 nm period) and a Si substrate. The transmittance was over 80% in the 4-5 microm wavelength range. The ratio of TM and TE transmittances was over 100 (20 dB) in the 2.5-6 microm wavelength range. The fabricated polarizer has higher durability and better compatibility with microfabrication processes compared with conventional IR polarizers.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1364/ol.33.000258 | DOI Listing |
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!