We have studied intersubband decay of E22 excitons in semiconducting carbon nanotubes experimentally and theoretically. Photoluminescence excitation line widths of semiconducting nanotubes with chiral indicess (n,m) can be mapped onto a connectivity grid with curves of constant (n - m) and (2n + m). Moreover, the global behavior of E22 line widths is best characterized by a strong increase with energy irrespective of their (n-m)mod(3) = +/-1 family affiliation. Solution of the Bethe-Salpeter equations shows that the E22 line widths are dominated by phonon assisted coupling to higher momentum states of the E11 and E12 exciton bands. The calculations also suggest that the branching ratio for decay into exciton bands vs free carrier bands, respectively is about 10:1.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/nl0720915 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures.
Nanotechnology
October 2017
Université Grenoble-Alpes, F-38000 Grenoble, France. CEA-Grenoble, INAC-PHELIQS, 17 av. des Martyrs, F-38000 Grenoble, France.
In this paper, we study band-to-band and intersubband (ISB) characteristics of Si- and Ge-doped GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 μm. Regarding the band-to-band properties, we discuss the variation of the screening of the internal electric field by free carriers, as a function of the doping density and well/nanodisk size.
View Article and Find Full Text PDFIntersubband decay of 1-D exciton resonances in carbon nanotubes.
Nano Lett
January 2008
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA.
We have studied intersubband decay of E22 excitons in semiconducting carbon nanotubes experimentally and theoretically. Photoluminescence excitation line widths of semiconducting nanotubes with chiral indicess (n,m) can be mapped onto a connectivity grid with curves of constant (n - m) and (2n + m). Moreover, the global behavior of E22 line widths is best characterized by a strong increase with energy irrespective of their (n-m)mod(3) = +/-1 family affiliation.
View Article and Find Full Text PDFOptical phonon sidebands of electronic intersubband absorption in strongly polar semiconductor heterostructures.
Phys Rev Lett
January 2005
Max-Born-Institut fùr Nichtlineare Optik und Kurzzeitspektroskopie, 12489 Berlin, Germany.
We present the first evidence for a distinct optical phonon progression in the linear and nonlinear intersubband absorption spectra of electrons in a GaN/Al(0.8)Ga(0.2)N heterostructure.
View Article and Find Full Text PDFWe propose a new scheme for lasing without population inversion that utilizes interferences in double-quantum-well intersubband transitions. In contrast to the previous inversionless laser schemes based on atomic systems, the new proposal permits us to use band-gap engineering to choose the subband energies, coupling strengths, and decay rates, as desired, and permits us to create a laser system that does not require population inversion. We present detailed calculations on a specific scheme and discuss possible extensions.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!