We report what is to our knowledge the first experimental evidence of nonlinear beam displacement in a strip-loaded GaAs/AlGaAs multiple-quantum-well waveguide with an asymmetric, nonlinear cladding. An intensity-dependent spatial displacement of ~2 mum was observed for the guided mode at a wavelength of 1.55 mum. Numerical simulations that correspond to the experiment are also presented. The device has the potential of providing a soliton-emission-based, ultrafast all-optical switch.

Download full-text PDF

Source
http://dx.doi.org/10.1364/ol.25.001282DOI Listing

Publication Analysis

Top Keywords

gaas/algaas multiple-quantum-well
8
multiple-quantum-well waveguide
8
soliton emission
4
emission asymmetric
4
asymmetric gaas/algaas
4
waveguide structures
4
structures half-bandgap
4
half-bandgap report
4
report knowledge
4
knowledge experimental
4

Similar Publications

Study on Strain Compensation for Multiple-Quantum Well in Infrared Light-Emitting Diode Using the InGaP Strain Barrier.

J Nanosci Nanotechnol

March 2018

CF Technology Division, AUK Corporation, Iksan 54630, Jeonbuk, South Korea.

Strain compensation for multiple-quantum wells (MQWs) relative to the efficiency improvement of infrared light-emitting diodes (IR-LEDs) was investigated through the use of an InxGa1-xP strain barrier. The InxGa1-xP barrier, which was inserted between the n-confinement and active regions, developed for the reduction of lattice-mismatched strains in GaAs/AlGaAs and InGaAs/GaAs MQWs. Through photoluminescence, improved intensity was displayed in InGaAs/GaAs MQWs having InxGa1-xP strain barriers, with a significant increase in the intensity observed at the In0.

View Article and Find Full Text PDF

This paper represents the influences of temperature and hydrostatic pressure variations on GaAs/AlGaAs multiple quantum well slow light systems based on coherence population oscillations. An analytical model in non-integer dimension space is used to study the considerable effects of these parameters on optical properties of the slow light apparatus. Exciton oscillator strength and fractional dimension constants have special roles on the analytical model in fractional dimension.

View Article and Find Full Text PDF

Design and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers.

Nano Lett

August 2016

Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory, 2601, Australia.

We present the design and room-temperature lasing characteristics of single nanowires containing coaxial GaAs/AlGaAs multiple quantum well (MQW) active regions. The TE01 mode, which has a doughnut-shaped intensity profile and is polarized predominantly in-plane to the MQWs, is predicted to lase in these nanowire heterostructures and is thus chosen for the cavity design. Through gain and loss calculations, we determine the nanowire dimensions required to minimize loss for the TE01 mode and determine the optimal thickness and number of QWs for minimizing the threshold sheet carrier density.

View Article and Find Full Text PDF

Excitonic spin-splitting in quantum wells with a tilted magnetic field.

J Phys Condens Matter

February 2016

Universidade Federal de Santa Catarina, 89065-300 Blumenau, Santa Catarina, Brazil.

This work aims to investigate the effects of magnetic field strength and direction on the electronic properties and optical response of GaAs/AlGaAs-based heterostructures. An investigation of the excitonic spin-splitting of a disordered multiple quantum well embedded in a wide parabolic quantum well is presented. The results for polarization-resolved photoluminescence show that the magnetic field dependencies of the excitonic spin-splitting and photoluminescence linewidth are crucially sensitive to magnetic field orientation.

View Article and Find Full Text PDF

Optically-pumped (69)Ga NMR (OPNMR) and optically-detected measurements of polarized photoluminescence (Hanle curves) show a characteristic feature at the light hole-to-conduction band transition in a GaAs/AlxGa1-xAs multiple quantum well sample. OPNMR data are often depicted as a "profile" of the OPNMR integrated signal intensity plotted versus optical pumping photon energy. What is notable is the inversion of the sign of the measured (69)Ga OPNMR signals when optically pumping this light hole-to-conduction band energy in OPNMR profiles at multiple external magnetic fields (B0=4.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!