A new approach involving self-assembling block copolymer micellar templates and gas-phase reactions to synthesize arrays of monodisperse III-nitrides nanocrystals in the size range of 1-5 nm with uniform spacings between the nanoparticles is demonstrated. The photoluminescence emission spectra revealed the GaN nanocrystals are in the quantum-confined regime. This method not only offers great promise for the controlled synthesis of arrays of ternary III-nitride nanocrystals but may also enable doping in binary nitrides.
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ACS Omega
January 2023
Institute of Chemical Technology, Vietnam Academy of Science and Technology, Ho Chi Minh City 700000, Vietnam.
In this report, red-emitting alumina nanophosphors doped with Mn and Mg (AlO:Mn, Mg) are synthesized by a hydrothermal method using a Pluronic surfactant. The prepared samples are ceramic-sintered at various temperatures. X-ray diffraction shows that AlO:Mn, Mg annealed at 500 °C exhibits a cubic γ-AlO phase with the space group 3-227.
View Article and Find Full Text PDFACS Nano
January 2023
Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.
Group III nitrides are of great technological importance for electronic devices. These materials have been widely manufactured high-temperature methods such as physical vapor transport (PVT), chemical vapor deposition (CVD), and hydride vapor phase epitaxy (HVPE). The preparation of group III nitrides by colloidal synthesis methods would provide significant advantages in the form of optical tunability size and shape control and enable cost reductions through scalable solution-based device integration.
View Article and Find Full Text PDFChemistry
September 2021
Institut de Chimie de la Matière Condensée de Bordeaux - UMR 5026, 87, Avenue du Docteur Schweitzer, 33608, Pessac cedex, France.
A chemistry platform for the fast continuous synthesis of III-V quantum dots is demonstrated. III-nitride QDs are prepared by using short residence times (less than 30 s) in a one-step continuous process with supercritical solvents. GaN QDs prepared via this route exhibit strong UV photoluminescence with a structuring of the emission signal at low temperature (5 K), confirming their high quality.
View Article and Find Full Text PDFRep Prog Phys
October 2013
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK.
The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al2O3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost.
View Article and Find Full Text PDFNanotechnology
July 2011
Institute of Photonic Technology, Jena, Germany.
Axial heterojunctions between pure silicon and pure germanium in nanowires have been realized combining pulsed laser deposition, chemical vapor deposition and electron beam evaporation in a vapor-liquid-solid nanowire growth experiment using gold nanoparticles as catalyst for the 1D wire growth. Energy dispersive x-ray mappings and line scans show a compositional transition from pure silicon to pure germanium and vice versa with exponential and thus comparably sharp transition slopes. Based on these results not only Si-Ge heterojunctions seem to be possible using the vapor-liquid-solid growth process but also heterojunctions in optoelectronic III-V compounds such as InGaAs/GaAs or group III nitride compounds such as InGaN/GaN as well as axial p-n junctions in Si nanowires.
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