A vertical slab waveguide design for an all-optical switch based on intersubband transitions in molecular beam epitaxy (MBE)-grown coupled double InGaAs/AlAsSb quantum well (QW) structures is presented. We propose a waveguide with two surrounding high refractive index InGaAsP guiding layers, which confine the optical mode in the low refractive index QW region and thus enable light guiding with low contrast InP cladding layers. We investigate the proposed concept by means of 1D simulations of several waveguide configurations. We confirm its validity by fabricating deeply etched waveguiding structures using either wet- or dry-etching technologies. Optical losses as low as 13.5 dB cm(-1) and 12.8 dB cm(-1) were measured for TM- and TE-polarized light, respectively.
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http://dx.doi.org/10.1364/ol.32.002680 | DOI Listing |
Nanophotonics
November 2024
College of Physical Science and Technology, State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen 361005, China.
Ultrafast all-optical control has been a subject of wide-spread attention as a method of manipulating optical fields using light excitation on extremely short time scales. As a fundamental form of ultrafast all-optical control, all-optical switching has achieved sub-picosecond switch speeds in the visible, infrared, and terahertz spectral regions. However, due to the lack of suitable materials, ultrafast all-optical control in the ultraviolet range remains in its early stages.
View Article and Find Full Text PDFNanophotonics
January 2024
School of Electrical Engineering, Hanyang University, Ansan 15588, South Korea.
Two-dimensional (2D) layered materials exhibit strong light-matter interactions, remarkable excitonic effects, and ultrafast optical response, making them promising for high-speed on-chip nanophotonics. Recently, significant attention has been directed towards anisotropic 2D materials (A2DMs) with low in-plane crystal symmetry. These materials present unique optical properties dependent on polarization and direction, offering additional degrees of freedom absent in conventional isotropic 2D materials.
View Article and Find Full Text PDFNanophotonics
May 2024
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716, USA.
Chalcogenide-based nonvolatile phase change materials (PCMs) have a long history of usage, from bulk disk memory to all-optic neuromorphic computing circuits. Being able to perform uniform phase transitions over a subwavelength scale makes PCMs particularly suitable for photonic applications. For switching between nonvolatile states, the conventional chalcogenide phase change materials are brought to a melting temperature to break the covalent bonds.
View Article and Find Full Text PDFNanophotonics
February 2024
Key Laboratory of Micro-/Nano-Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China.
Detection of transparent phase specimens especially biological cells with desired contrasts is of great importance in visual display and medical diagnosis. Due to the pure-phase nature, conventional detection approaches may damage samples or require complex operations. Computing liquid crystal (LC) is a thin and flat optical element with excellent capability in optical field modulation, which gives a feasible way to this issue from the perspective of analog optical computing.
View Article and Find Full Text PDFThe optical single sideband (SSB) transmitter based on dual modulation of an electro-absorption modulation laser (D-EML) has attracted considerable attention for its capability of monolithic integration and high output power. A model-based modulation method has been developed recently for generating high-quality optical SSB signals with this D-EML scheme. However, this method requires accurate characterization of the EML's chirps and pre-compensation for frequency responses of all-optical/electrical components, as well as the path difference between two driving signals.
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