Structures in which electrons are confined to move in two dimensions (quantum wells) have led to new physical discoveries and technological applications. Modification of these structures to confine the electrons to one dimension (quantum wires) or release them in the third dimension, are predicted to lead to new electrical and optical properties. This article discusses techniques to make quantum wires, and quantum wells of controlled size and shape, from compound semiconductor materials, and describes some of the properties of these structures.
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http://dx.doi.org/10.1126/science.254.5036.1326 | DOI Listing |
In this paper, we studied the sidewall conditions of 28 × 52 µm InGaN-based blue and green micro-LEDs with different sidewall angles and their effects on external quantum efficiency (EQE). Our findings indicate that steeper sidewall mesas can reduce non-radiative recombination and leakage current, which is beneficial for achieving high internal quantum efficiency (IQE). However, as the sidewall angle increases, the light output from the micro-LED tends to concentrate in the internal region, leading to a decrease in light extraction efficiency (LEE).
View Article and Find Full Text PDFThe intrinsic spontaneous and piezoelectric polarizations of GaN lead to the formation of triangular wells and barriers, resulting in the manifestation of chaotic transport models in GaN quantum well intersubband transition (ISBT) infrared detectors and giving rise to various adverse effects. The APSYS software was utilized to construct a novel GaN quantum well ISBT infrared detector in this study. By endeavoring to modify the quantum well structure, our objective was to precisely adjust the energy level of the first excited state (E1) to align with the apex of the triangular barrier.
View Article and Find Full Text PDFWe report an InP-based MMI combiner integrated array of 4 channel directly modulated 1.3 µm distributed feedback (DFB) lasers. Each laser channel in the array has an active DFB section and a passive distributed Bragg reflector (DBR) section.
View Article and Find Full Text PDFSci Rep
January 2025
Departament de Fisica de la Materia Condensada, University of Barcelona, Marti i Franquès 1, 08028, Barcelona, Spain.
We present a nonlinear model of thermal field emission in resonant tunneling nanostructures with multiple barriers and potential wells, based on an accurate determination of the quantum potential shape and a rigorous solution of the Schrödinger equation, while considering thermal balance. The model applies to vacuum and semiconductor resonant tunnel diode and triode structures with two and three electrodes and to the general case of two-way tunneling with electrode heating. The complete balance of heat release and transfer is accounted for, with heat transport considered ballistic.
View Article and Find Full Text PDFMaterials (Basel)
January 2025
CNR-IOM-Istituto Officina dei Materiali, Consiglio Nazionale delle Ricerche, 34149 Trieste, Italy.
Hybrid systems consisting of highly transparent channels of low-dimensional semiconductors between superconducting elements allow the formation of quantum electronic circuits. Therefore, they are among the novel material platforms that could pave the way for scalable quantum computation. To this aim, InAs two-dimensional electron gases are among the ideal semiconductor systems due to their vanishing Schottky barrier; however, their exploitation is limited by the unavailability of commercial lattice-matched substrates.
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