We consider a lateral double-dot system in the Coulomb blockade regime with a single spin-1/2 on each dot, mutually coupled by an antiferromagnetic exchange interaction. Each of the two dots is contacted by two leads. We demonstrate that the voltage across one of the dots will have a profound influence on the current passing through the other dot. Using poor man's scaling, we find that the Kondo effect can lead to a strong enhancement of this transconductance.
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http://dx.doi.org/10.1103/PhysRevLett.99.036807 | DOI Listing |
Sensors (Basel)
January 2025
Faculty of Arts and Sciences, Bolu Abant Izzet Baysal University, 14280 Bolu, Turkey.
We report on a procedure for extracting the SPICE model parameters of a RADFET sensor with a dielectric HfO/SiO double-layer. RADFETs, traditionally fabricated as PMOS transistors with SiO, are enhanced by incorporating high-k dielectric materials such as HfO to reduce oxide thickness in modern radiation sensors. The fabrication steps of the sensor are outlined, and model parameters, including the threshold voltage and transconductance, are extracted based on experimental data.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
Nanowire (NW) field-effect transistors (FETs) have great potential in next-generation integrated circuits. InAs NWs are suitable for N-type transistors because of their excellent electrical properties. However, unlike the Si/SiO system, the loose and defective native oxide of InAs is unable to passivate the channel surface and serve as an efficient isolation layer (IL) in the gate stack.
View Article and Find Full Text PDFACS Appl Mater Interfaces
November 2024
Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa K1N6N5, Ontario, Canada.
A rise in demand for disposable consumer electronics such as smart packaging, wearable electronics, and single-use point-of-source sensors requires the development of eco-friendly and compostable electronic materials. Chitosan is derived from crustacean waste and offers high dielectric constant values without requiring rigorous purification, making it sustainable for large-scale electronic device manufacturing. When processed in acidic media, the protonated backbone of chitosan pairs with counterions from the acid dissociation to form chitosan thin films with electrical double layers (EDLs) and tunable capacitive properties.
View Article and Find Full Text PDFMicromachines (Basel)
September 2024
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
In order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer. The strongly polarized and ultra-thin AlN sub-barrier and the InAlN sub-barrier are great candidates. In this article, the two epitaxial structures, AlGaN/GaN/AlN/GaN (sub-AlN) HEMTs and AlGaN/GaN/InAlN/GaN (sub-InAlN) HEMTs, were compared to select a more suitable sub-barrier layer.
View Article and Find Full Text PDFColloids Surf B Biointerfaces
January 2025
School of Electronic Engineering, Heilongjiang University, Harbin 150080, China; Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China.
A transistor inspired by biological systems, which possesses synaptic and sensing capabilities, has demonstrated significant promise in the field of neuromorphic electronics and sensory systems resembling the human brain. Despite the remarkable advancements in emulating neuromorphic operations, the development of a synaptic FET with a bionic architecture, extended lifespan, minimal energy usage, and marker monitoring capability remains challenging. In this work, a synaptic transistor based on NiAl-layer double hydroxides nanosheets is reported.
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