Complementary metal oxide semiconductor (CMOS) microelectronic chips fulfill important functions in the field of biomedical research, ranging from the generation of high complexity DNA and protein arrays to the detection of specific interactions thereupon. Nevertheless, the issue of merging pure CMOS technology with a chemically stable surface modification which further resists interfering nonspecific protein adsorption has not been addressed yet. We present a novel surface coating for CMOS microchips based on poly(ethylene glycol)methacrylate graft polymer films, which in addition provides high loadings of functional groups for the linkage of probe molecules. The coated microchips were compatible with the harshest conditions emerging in microarray generating methods, thoroughly retaining structural integrity and microelectronic functionality. Nonspecific adsorption of proteins on the chip's surface was completely obviated even with complex serum protein mixtures. We could demonstrate the background-free antibody staining of immobilized probe molecules without using any blocking agents, encouraging further integration of CMOS technology in proteome research.
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http://dx.doi.org/10.1021/pr0701310 | DOI Listing |
Sensors (Basel)
December 2024
Department of System Semiconductor, Dongguk University, Seoul 04620, Republic of Korea.
In this study, we describe a low-noise complementary metal-oxide semiconductor (CMOS) image sensor (CIS) with a 10/11-bit hybrid single-slope analog-to-digital converter (SS-ADC). The proposed hybrid SS-ADC provides a resolution of 11 bits in low-light and 10 bits in high-light. To this end, in the low-light section, the digital-correlated double sampling method using a double data rate structure was used to obtain a noise performance similar to that of the 11-bit SS-ADC under low-light conditions, while maintaining linear in-out characteristics.
View Article and Find Full Text PDFSensors (Basel)
December 2024
Electronics Technology Department, University of Madrid Carlos III, 28911 Leganes, Spain.
This paper explores the implementation of a VCO-based ADC, achieving an ENOB of 12 bits with 1 MHz of a sampling rate in the audio bandwidth. The solution exploits the scalability and PVT invariance of a novel digital-to-frequency converter to reduce the size and consumed power. The architecture has been validated in a 130 nm CMOS technology node displaying a power consumption of 105.
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December 2024
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
This paper presents a 35 nV/√Hz analog front-end (AFE) circuitdesigned in the UMC 40 nm CMOS technology for the acquisition of biopotential signal. The proposed AFE consists of a capacitive-coupled instrumentation amplifier (CCIA) and a combination of a programmable gain amplifier (PGA) and a low-pass filter (LPF). The CCIA includes a DC servo loop (DSL) to eliminate electrode DC offset (EDO) and a ripple rejection loop (RRL) with self-zeroing technology to suppress high-frequency ripples caused by the chopper.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Taiyuan 030051, China.
A MEMS gyroscope is a critical sensor in attitude control platforms and inertial navigation systems, which has the advantages of small size, light weight, low energy consumption, high reliability and strong anti-interference capability. This paper presents the design, simulation and fabrication of a Y-axis gyroscope with out-of-plane detection developed using CMOS-MEMS technology. The structural dimensions of the gyroscope were optimized through a multi-objective genetic algorithm, and modal, harmonic response and range simulation analyses were carried out to verify the reasonableness of the design.
View Article and Find Full Text PDFMicromachines (Basel)
November 2024
Department of Mechanical Engineering, College of Engineering, King Khalid University, Abha 61421, Saudi Arabia.
In robotic arm controllers, the ability to shift signal levels is crucial for interfacing between different voltage domains in a processor. The level shifter (LS) has been used to convert signals operating near threshold voltage to signals operating well above the threshold voltage. Researchers have developed current mirror-based LSs to employ current mirrors, which duplicate the current from one transistor and accurately replicate it in another, ensuring precise current matching.
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